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Titlebook: The Quantum Hall Effects; Integral and Fractio Tapash Chakraborty,Pekka Pietiläinen Book 19952nd edition Springer-Verlag Berlin Heidelberg

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书目名称The Quantum Hall Effects
副标题Integral and Fractio
编辑Tapash Chakraborty,Pekka Pietiläinen
视频video
丛书名称Springer Series in Solid-State Sciences
图书封面Titlebook: The Quantum Hall Effects; Integral and Fractio Tapash Chakraborty,Pekka Pietiläinen Book 19952nd edition Springer-Verlag Berlin Heidelberg
描述The experimental discovery of the fractional quantum Hall effect (FQHE) at the end of 1981 by Tsui, Stormer and Gossard was absolutely unexpected since, at this time, no theoretical work existed that could predict new struc­ tures in the magnetotransport coefficients under conditions representing the extreme quantum limit. It is more than thirty years since investigations of bulk semiconductors in very strong magnetic fields were begun. Under these conditions, only the lowest Landau level is occupied and the theory predicted a monotonic variation of the resistivity with increasing magnetic field, depending sensitively on the scattering mechanism. However, the ex­ perimental data could not be analyzed accurately since magnetic freeze-out effects and the transitions from a degenerate to a nondegenerate system complicated the interpretation of the data. For a two-dimensional electron the positive background charge is well separated from the two­ gas, where dimensional system, magnetic freeze-out effects are barely visible and an analysis of the data in the extreme quantum limit seems to be easier. First measurements in this magnetic field region on silicon field-effect transistors wer
出版日期Book 19952nd edition
关键词Hall effect; Mony-electron ground state; Quantum Hall Effect; energy gap; fractionally charged quasipart
版次2
doihttps://doi.org/10.1007/978-3-642-79319-6
isbn_softcover978-3-540-58515-2
isbn_ebook978-3-642-79319-6Series ISSN 0171-1873 Series E-ISSN 2197-4179
issn_series 0171-1873
copyrightSpringer-Verlag Berlin Heidelberg 1995
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0171-1873 ected since, at this time, no theoretical work existed that could predict new struc­ tures in the magnetotransport coefficients under conditions representing the extreme quantum limit. It is more than thirty years since investigations of bulk semiconductors in very strong magnetic fields were begun.
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The Quantum Hall Effects978-3-642-79319-6Series ISSN 0171-1873 Series E-ISSN 2197-4179
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Springer Series in Solid-State Scienceshttp://image.papertrans.cn/t/image/918092.jpg
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https://doi.org/10.1007/978-3-642-79319-6Hall effect; Mony-electron ground state; Quantum Hall Effect; energy gap; fractionally charged quasipart
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Book 19952nd editionsitive background charge is well separated from the two­ gas, where dimensional system, magnetic freeze-out effects are barely visible and an analysis of the data in the extreme quantum limit seems to be easier. First measurements in this magnetic field region on silicon field-effect transistors wer
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