找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: Transistor Level Modeling for Analog/RF IC Design; WLADYSLAW GRABINSKI,BART NAUWELAERS,DOMINIQUE SCHR Book 2006 Springer Science+Business

[复制链接]
查看: 13633|回复: 41
发表于 2025-3-21 19:07:00 | 显示全部楼层 |阅读模式
书目名称Transistor Level Modeling for Analog/RF IC Design
编辑WLADYSLAW GRABINSKI,BART NAUWELAERS,DOMINIQUE SCHR
视频video
概述Brings together a variety of modeling techniques.Treats models as well as methods of implementation.Is a true in depth source for MOS-modelers
图书封面Titlebook: Transistor Level Modeling for Analog/RF IC Design;  WLADYSLAW GRABINSKI,BART NAUWELAERS,DOMINIQUE SCHR Book 2006 Springer Science+Business
描述Among many great inventions made in the 20th century, electronic circuits, which later evolved into integrated circuits, are probably the biggest, when considering their contribution to human society. Entering the 21st century, the importance of integrated circuits has increased even more. In fact, without the help of integrated circuits, recent high-technology society with the internet, cellular phone, car navigation, digital camera, and robot would never have been realized. Nowadays, integrated circuits are indispensable for almost every activity of our society. One of the critical issues for the fabrication of integrated circuits has been the precise design of the high-speed or high-frequency operation of circuits with huge number of components. It is quite natural to predict the circuit operation by computer calculation, and there have been three waves for this, at 15-year intervals. The ?rst wave came at the beginning of the 1970s when LSIs (Large Scale Integrated circuits) with more than 1000 components had just been int- duced into the market. A mainframe computer was used for the simulation, and each semiconductor company used its own proprietary simulators and device model
出版日期Book 2006
关键词Hardware; Leistungsfeldeffekttransistor; MOSFET; Potential; Standard; VHDL; Verilog; analog; field-effect tr
版次1
doihttps://doi.org/10.1007/1-4020-4556-5
isbn_softcover978-90-481-7148-4
isbn_ebook978-1-4020-4556-1
copyrightSpringer Science+Business Media B.V. 2006
The information of publication is updating

书目名称Transistor Level Modeling for Analog/RF IC Design影响因子(影响力)




书目名称Transistor Level Modeling for Analog/RF IC Design影响因子(影响力)学科排名




书目名称Transistor Level Modeling for Analog/RF IC Design网络公开度




书目名称Transistor Level Modeling for Analog/RF IC Design网络公开度学科排名




书目名称Transistor Level Modeling for Analog/RF IC Design被引频次




书目名称Transistor Level Modeling for Analog/RF IC Design被引频次学科排名




书目名称Transistor Level Modeling for Analog/RF IC Design年度引用




书目名称Transistor Level Modeling for Analog/RF IC Design年度引用学科排名




书目名称Transistor Level Modeling for Analog/RF IC Design读者反馈




书目名称Transistor Level Modeling for Analog/RF IC Design读者反馈学科排名




单选投票, 共有 0 人参与投票
 

0票 0%

Perfect with Aesthetics

 

0票 0%

Better Implies Difficulty

 

0票 0%

Good and Satisfactory

 

0票 0%

Adverse Performance

 

0票 0%

Disdainful Garbage

您所在的用户组没有投票权限
发表于 2025-3-21 20:36:16 | 显示全部楼层
第100165主题贴--第2楼 (沙发)
发表于 2025-3-22 01:39:04 | 显示全部楼层
板凳
发表于 2025-3-22 07:07:00 | 显示全部楼层
第4楼
发表于 2025-3-22 12:44:56 | 显示全部楼层
5楼
发表于 2025-3-22 13:22:01 | 显示全部楼层
6楼
发表于 2025-3-22 18:00:04 | 显示全部楼层
7楼
发表于 2025-3-22 22:17:39 | 显示全部楼层
8楼
发表于 2025-3-23 01:54:20 | 显示全部楼层
9楼
发表于 2025-3-23 09:32:52 | 显示全部楼层
10楼
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-6-8 04:12
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表