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Titlebook: Subsecond Annealing of Advanced Materials; Annealing by Lasers, Wolfgang Skorupa,Heidemarie Schmidt Book 2014 Springer International Publis

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发表于 2025-3-21 19:57:56 | 显示全部楼层 |阅读模式
书目名称Subsecond Annealing of Advanced Materials
副标题Annealing by Lasers,
编辑Wolfgang Skorupa,Heidemarie Schmidt
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概述Written by leading researchers in the field.Describes annealing-related processes in semiconductor technology.Includes a broad range of examples.Includes supplementary material:
丛书名称Springer Series in Materials Science
图书封面Titlebook: Subsecond Annealing of Advanced Materials; Annealing by Lasers, Wolfgang Skorupa,Heidemarie Schmidt Book 2014 Springer International Publis
描述The thermal processing of materials ranges from few fem to seconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing. This book offers after an historical excursus selected contributions on fundamental and applied aspects of thermal processing of classical elemental semiconductors and other advanced materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Special emphasis is given on the diffusion and segregation of impurity atoms during thermal treatment. A broad range of examples describes the solid phase and/or liquid phase processing of elemental and compound semiconductors, dielectric composites and organic materials.
出版日期Book 2014
关键词Activation of Dopants; Annealing by Swift Heavy Ions; Epitaxial Growth of Silicon; Explosive Crystallis
版次1
doihttps://doi.org/10.1007/978-3-319-03131-6
isbn_softcover978-3-319-35287-9
isbn_ebook978-3-319-03131-6Series ISSN 0933-033X Series E-ISSN 2196-2812
issn_series 0933-033X
copyrightSpringer International Publishing Switzerland 2014
The information of publication is updating

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Danilo Bürger,Shengqiang Zhou,Marcel Höwler,Xin Ou,György J. Kovacs,Helfried Reuther,Arndt Mücklich,
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Superconducting Gallium Implanted Germanium,and at the same time to avoid dopant clustering. In strong contrast to all other doping techniques, ion implantation is not limited to the equilibrium solid solubility of the dopants in the host material. Furthermore, it is widely used in nowadays microelectronics technology which makes this process
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Structural Changes in SiGe/Si Layers Induced by Fast Crystallization,: Segregation of Ge to nanometer-scale cellular network and islands: effect of SiGe composition and crystallization velocity; Morphology and atomic structure of swift heavy ion-induced discontinuous tracks in SiGe alloy layers as a result of fast segregation; Pulsed laser modification of Ge and GeSn
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Sub-nanosecond Thermal Spike Induced Nanostructuring of Thin Solid Films Under Swift Heavy Ion (SHIation of a-Si/c-Si nanostructures in a silicon nitride matrix..(i) Metal nanoparticles embedded in a thin film matrix belong to a class of materials that has potential applications as optical and magnetic sensors, storage, memory devices, field emission display etc. The nanoparticle size and shape,
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