Titlebook: Spontaneous Ordering in Semiconductor Alloys; Angelo Mascarenhas Book 2002 Springer Science+Business Media New York 2002 Experiment.alloy.

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Cross-Sectional Scanning Tunneling Microscopy as a Probe of Local Order in Semiconductor Alloys,n GaInP and GaInAs. Under appropriate growth conditions, these alloys exhibit CuPt. type order in which the group III cations form a monolayer superlattice of alternating Ga (IIIA) and In (IIIB) planes oriented along either <1 1 1>-. direction. Atomic-resolution STM images of these ordered ternaries

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Polarization Effects in the (Electro)absorption of Ordered GaInP and their Device Applications,on of approximately 1 meV, they allow the exact determination of transition energies at the Γ point. We are able to give accurate values for ordering-relevant parameters like the band gap reduction, valence band splitting and the position of the split-off valence band. Moreover, the exact energetic

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Effects of Ordering on Physical Properties of Semiconductor Alloys,ering induced changes in the structural, electronical, and optical properties of the semiconductor alloys as a function of the long range order parameter η. These include (i) the band gap reduction △E. and the valence band splitting △E., (ii) the appearence of new structural factors, (iii) the chang

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Polarization Charges at Spontaneously Ordered (In,Ga)P/GaAs Interfaces,pe GaAs/(In,Ga)P/GaAs heterojunctions are discussed as obtained from capacitance-voltage measurements. The two interfaces are not equivalent. Positive and negative sheet charges are observed at the (In,Ga)P-on-GaAs and the GaAs-on-(In,Ga)P interfaces, respectively. The density of these interfacial c

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Effects of Ordering on Physical Properties of Semiconductor Alloys,ties, (v) the ordering induced optical anisotropy, and (vi) the spin polarization of photoemitted electrons near the band edge. The effects of stacking fault in order semiconductor alloys are also discussed.

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