Titlebook: Spatio-Temporal Dynamics and Quantum Fluctuations in Semiconductor Lasers; Edeltraud Gehrig,Ortwin Hess Book 2003 Springer-Verlag Berlin H

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Spatio-Spectral Wave Mixing in High-Power Amplifier and Laser Systems,in equations presented in Chap. 2 and Chap. 3 and includes all relevant dynamic microscopic and macroscopic processes responsible for the special emission properties of high-power amplifiers. Since the active area of high-power laser amplifiers is large compared to characteristic length scales given

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Delayed Optical Feedback and Control of Spatio-Temporal Dynamics,in the fundamental transverse mode from an originally spatio-temporally chaotic state. We first give a brief survey of the model equations and next discuss a complex eigenmode analysis via the Karhunen--Loéve algorithm, which yields a decomposition of the complex optical field into a set of orthonor

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Spatially Inhomogeneous Luminescence in Semiconductor Lasers,in semiconductor lasers. The theory builds on and adopts the concepts of quantum Maxwell--Bloch equations (QMBEs) describing the spatiotemporal dynamics of photoluminescence of excited semiconductor lasers.

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Polarization Fluctuations and Dynamics of Vertical-Cavity Surface-Emitting Lasers,spectral carrier dynamics of the carriers along with the spatio-temporal dynamics of the polarized optical fields and the temperature dynamics. In the second part of this chapter we will analyze the polarization fluctations on the basis of a simplified rate equation model.

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Spatio-Spectral Wave Mixing in High-Power Amplifier and Laser Systems,sion properties of high-power amplifiers. Since the active area of high-power laser amplifiers is large compared to characteristic length scales given by e.g. carrier diffusion and diffraction, the longitudinal and transverse dependence of the optical fields as well as their counterpropagation are of particular importance.

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Semiconductor Laser Theory: The Maxwell--Bloch Equations,geometries of quantum structures, as well as perturbations such as a magnetic field, strain, or a built-in or external potential. Details of the underlying crystal potential are included in terms of bulk band structure parameters.

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Nonlinear Pulse Propagation and Solitons in Active Semiconductor Media, dynamics within the active layer. Further we will consider the simultaneous and oblique injection of two optical pulses in the charge carrier plasma of a broad-area semiconductor laser and analyze the nonlinear mechanisms responsible for the formation of a spatio-spectral soliton.