Titlebook: Silicon-Based Millimeter-Wave Devices; Johann-Friedrich Luy,Peter Russer Book 1994 Springer-Verlag Berlin Heidelberg 1994 Planar.Sensor.an

狂热文化

贪婪性

利用

Book 1994he principles and limitations of transit-time devices with different injection mechanisms are discussed, as are aspects of fabrication and characterization. The physical properties of silicon Schottky contacts and diodes are treated in a separate chapter. Two chapters cover the silicon/germanium dev

兽皮

Transit-Time Devices,n of oscillations. Later these ideas were implemented in semiconductor devices [2.2]. This concept is the basis for IMPATT (IMPact Avalanche Transit-Time), BARITT (BARier Injection Transit-Time), TUNNETT (TUNNEl injection Transit-Time) diodes and related versions.

结合

Schottky Contacts on Silicon,tal/semiconductor interfaces [3.1]. The following decades brought out a variety of technical applications, but it took more than sixty years until . [3.2] and, independently, . [3.3] gave microscopic concepts to describe these so-called .. Today, in 1994, these interfaces are still not completely understood.

实现

Self-Mixing Oscillators,cillation due to the nonlinear behaviour of the active device that generates the RF power. This is, in principle, the same as a self-oscillating mixer besides the fact that the produced local-oscillator power may also be extracted from the self-mixing oscillator, e.g., for transmission in Doppler-radar applications.

讨厌

Springer Series in Electronics and Photonicshttp://image.papertrans.cn/s/image/867348.jpg

Decongestant

cortex

Silicon Millimeter-Wave Integrated Circuits,The availability of low-cost and reproducible millimeter-wave circuits is of great importance for systems in the future. A promising way to achieve these requirements are integrated circuits based on silicon substrate, the so-called SIMMWICs (Silicon MilliMeter Wave Integrated Circuits).

尽忠