书目名称 | Silicon Photonics IV | 副标题 | Innovative Frontiers | 编辑 | David J. Lockwood,Lorenzo Pavesi | 视频video | | 概述 | Gives a state-of-the-art report on integrated silicon photonics.Covers new research into light production in Group IV materials.Valuable reference to researchers and graduate students alike | 丛书名称 | Topics in Applied Physics | 图书封面 |  | 描述 | .This fourth book in the series .Silicon Photonics. gathers together reviews of recent advances in the field of silicon photonics that go beyond already established and applied concepts in this technology. The field of research and development in silicon photonics has moved beyond improvements of integrated circuits fabricated with complementary metal–oxide–semiconductor (CMOS) technology to applications in engineering, physics, chemistry, materials science, biology, and medicine. The chapters provided in this book by experts in their fields thus cover not only new research into the highly desired goal of light production in Group IV materials, but also new measurement regimes and novel technologies, particularly in information processing and telecommunication. The book is suited for graduate students, established scientists, and research engineers who want to update their knowledge in these new topics.. | 出版日期 | Book 2021 | 关键词 | Integrated silicon optics; Optical interconnects on silicon basis; Optoelectronics of silicon; Silicon- | 版次 | 1 | doi | https://doi.org/10.1007/978-3-030-68222-4 | isbn_softcover | 978-3-030-68224-8 | isbn_ebook | 978-3-030-68222-4Series ISSN 0303-4216 Series E-ISSN 1437-0859 | issn_series | 0303-4216 | copyright | The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerl |
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Front Matter |
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Optical Properties of Si Nanocrystals Enhanced by Ligands |
Kateřina Dohnalová,Kateřina Kůsová |
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Compared to bulk silicon, silicon nanocrystals (Si-NCs) show modified properties, such as tunable emission and enhanced radiative rate, as a result of the quantum confinement, surface chemistry and environment. While the effect of quantum confinement is well understood and experimentally confirmed on the hydrogen-capped Si-NCs, the surface effects in Si-NC with other types of ligands can be very complex and hard to predict. In our work, we argue that the surface chemistry, be it ligands and/or shell, can be designed to further improve the radiative rate of the Si-NCs, beyond what is achievable by the quantum confinement alone. Our experimental work shows a number of effects that indicate that in many instances, the core and surface capping cannot be separated, and optical properties cannot be clearly interpreted as “extrinsic” (related to the surface capping agent) or “intrinsic” (related to the core only). To this end, we performed also a detailed theoretical analysis of a number of surface ligands, to identify the role of chemistry and how that improves the optical properties of Si-NCs. Based on these investigations and findings, we realized two main things. Firstly, we argue tha
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Light-Emission from Ion-Implanted Group-IV Nanostructures |
Moritz Brehm |
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Silicon photonics is destined to revolutionize technological areas, such as short-distance data transfer and sensing applications by combining the benefits of integrated optics with the assertiveness of silicon-based microelectronics. However, the lack of practical and low-cost silicon-based monolithic light sources such as light-emitting diodes and, in particular, lasers remains the main bottleneck for silicon photonics to become the key technology of the twenty-first century. After briefly reviewing the state of the art regarding silicon-based light-emitters, we discuss the challenges and benefits of a highly flexible approach: The epitaxial incorporation of group-IV nanostructures into crystalline silicon. We argue that a paradigm change for group-IV quantum dots (QDs) can be achieved by the intentional incorporation of extended point defects inside the QDs upon low-energy ion implantation. The superior light-emission properties from such defect-enhanced quantum dots (DEQDs), our present understanding of their structural formation and light-emission mechanisms will be discussed. We will show that useful electrically driven devices, such as light-emitting diodes (LEDs), can be fa
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Lasing in Group-IV Materials |
V. Reboud,D. Buca,H. Sigg,J. M. Hartmann,Z. Ikonic,N. Pauc,V. Calvo,P. Rodriguez,A. Chelnokov |
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Silicon photonics in the near-IR, up to 1.6 µm, is already one of key technologies in optical data communications, particularly short range. It also is being prospected for applications in quantum computing, artificial intelligence, optical signal processing, where complex photonic integration is to be combined with a large-volume fabrication. However, silicon photonics does not yet cover a large portion of applications in the mid-IR. In the wavelength range of 2–5 µm, environmental sensing, life sensing and security, all rely on optical signatures of molecular vibrations to identify complex individual chemical species. The markets for such analysis are huge and constantly growing, with a push for sensitivity, specificity, compactness, low-power operation and low cost. An all-group-IV, CMOS-compatible mid-IR integrated photonic platform would be a key enabler in this wavelength range. As for other wavelengths, such a platform should be complete with low-loss guided interconnects, detectors, eventually modulators, and most important an efficient and integrated light sources. This chapter reviews the recent developments of mid-IR silicon-compatible optically and electrically pumped l
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Light Emission from Germanium Nanostructures |
Nelson L. Rowell,David J. Lockwood |
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This Chapter discusses the phenomena associated with germanium (Ge) nanocrystals emitting near infrared radiation under optical excitation. We describe how the emission properties are influenced by various effects, including those of strain and particle confinement, as well as excitation mechanisms. Two example systems are discussed, namely one of isolated Ge quantum dots and another of Ge nanocrystals coherently imbedded in SiGe alloy layers, where both systems were grown by molecular beam epitaxy (MBE) on Si substrates. For the Ge dot ensembles, we show how particle size information can be derived from the emission spectrum. For the Ge nanocrystals, the emission spectra are analyzed for the effects of strain and particle confinement over a wide range of Ge fractions in the surrounding SiGe medium. This analysis provided significant insight into the properties of the Ge nanocrystals, including their size and shape, which were a 1.4 nm thickness in the MBE growth direction and a 7 nm lateral dimension. We also discuss the mechanisms leading to the high quantum efficiency observed for emission from the Ge nanocrystals at low temperatures.
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Optical Spin Orientation in Ge-Based Heterostructures |
Simone Rossi,Elisa Vitiello,Fabio Pezzoli |
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The paradigm shift introduced by Si photonics has had a tremendous impact on data transfer and processing speed. Beyond communication, many exciting opportunities for value creation across diverse disciplines, applications, and industries have been rapidly introduced throughout the years. Novel phenomena merging photonics and spin-based electronics are just beginning to emerge. Ge-based heterostructures can tremendously expand our capabilities offering creative and unprecedented solutions to the challenges of integrating spin functionalities onto Si photonics. In this chapter, we will review the latest advancements in this field, paying particular attention to the unique coexistence of notable optical properties and superior spin-dependent characteristics in Ge and novel GeSn alloys.
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Subwavelength Silicon Photonics |
Hon Ki Tsang,Xia Chen,Zhenzhou Cheng,Wen Zhou,Yeyu Tong |
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Subwavelength gratings refer to periodic structures that have a period less than half the wavelength of light in the material so that no Bragg diffraction mode is supported. Instead, the light will propagate as if it was in a homogeneous material with anisotropic refractive indices. Subwavelength gratings have attracted great interest recently, as they provide a useful degree of freedom for the crafting of the effective refractive index of the material in photonic devices. In this chapter, we will introduce some of the applications of subwavelength structures for silicon photonics devices. We start by introducing the background theory of subwavelength gratings and then discuss their applications for the engineering of waveguide grating couplers, suspended membrane devices for mid-infrared (mid-IR) wavelengths, and their use with numerical optimization techniques for optimizing photonic devices. We shall discuss the classic effective medium theory (EMT) for subwavelength gratings and show how EMT can reduce time-consuming three-dimensional (3D) numerical optimizations to an effective two-dimensional (2D) optimization problem.
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Non-Hermitian Physics and Engineering in Silicon Photonics |
Changqing Wang,Zhoutian Fu,Lan Yang |
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Driven by the great needs for low-cost and scalable advanced optoelectronic systems that could leverage the existing infrastructure already developed for the semiconductor industry, silicon photonics has been extensively explored as a platform with system-level integration to host numerous devices and systems with various functionalities, including lasers, modulators, filters, isolators, wavelength division multiplexing (WDM) transceivers, etc. Recently, non-Hermitian physics, which breaks the conventional scope of quantum mechanics based on Hermitian Hamiltonians, has been widely explored in the platform of silicon photonics. With judicious designs of refractive index, modal coupling and gain–loss distribution, unconventional control and manipulation of light flow and nonlinear effects could be achieved. As we will discuss in this chapter, the unconventional properties of exceptional points and parity-time symmetry realized in silicon photonics have created new opportunities for ultrasensitive sensors, laser engineering, control of light propagation, topological mode conversion, etc. The marriage between the quantum non-Hermiticity and classical silicon platforms not only inspires
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Topological Photonics with Microring Lattices |
Shirin Afzal,Tyler James Zimmerling,Vien Van |
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Topological photonic insulators have attracted considerable attention due to their unique ability to transport light via topologically-protected edge states that are immune to defect scattering. Among the various potential applications, this property can be exploited to engineer robust photonic devices that are insensitive to fabrication imperfections. This chapter reviews the key concepts of topological insulator systems in one and two dimensions and their realizations using coupled microring resonator lattices. Particular emphasis will be placed on the treatment of microring lattices as periodically-driven systems and their Floquet topological characteristics. Experimental efforts in realizing Floquet microring lattices and demonstrating anomalous Floquet insulator behaviors will also be reviewed.
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Parallel Digital Gradient Search Technique for Rapid Automated Alignment of Devices on Silicon Photo |
Scott Jordan |
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Silicon photonics has emerged as an essential technology for the world moving forward. Colliding needs for escalating data consumption versus environmental sustainability drive the shift from copper-based networking architectures to photon based. New technologies for implementing photonic devices on semiconductor substrates have ignited an explosion of innovation in support of these trends, and while the energy efficiencies of the transition are clear and are rooted in fundamental physics, the economic realities of manufacturing these devices at the necessary scale have posed significant challenges. In particular, the step of aligning photonic elements such as lasers, chips and fibers to maximize transmission has been a time-consuming (and therefore costly) requirement that even more unfortunately must be repeated many times in the test-and-assembly process, starting even before the chips are diced off of the wafer. There is no analog to this step in conventional microelectronic manufacturing. The challenge grows worse as devices grow more complex, for example when adding array channels or additional discrete components, as this introduces physical and geometric dependencies and ne
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Neuromorphic Silicon Photonics for Artificial Intelligence |
Bicky A. Marquez,Chaoran Huang,Paul R. Prucnal,Bhavin J. Shastri |
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Recent investigations in neuromorphic photonics, i.e. neuromorphic architectures on photonics platforms, have garnered much interest to enable high-bandwidth, low-latency, low-energy applications of neural networks in machine learning and neuromorphic computing. Although electronics can match biological time scales and exceed them, they eventually reach bandwidth limitations. Neuromorphic photonics exploits the advantages of optical electronics, including the ease of analog processing, and fully parallelism achieved by busing multiple signals on a single waveguide at the speed of light. In this chapter, we summarize silicon photonic on-chip neural network architectures that have been widely investigated from different approaches that can be grouped into three categories: (1) reservoir computing; reconfigurable architectures based on (2) Mach-Zehnder interferometers, and (3) ring-resonators. Our scope is limited to their forward propagation, and includes potential on-chip machine learning tasks and efficiency analyses of the proposed architectures.
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Quantum Processors in Silicon Photonics |
Stefano Paesani,Anthony Laing |
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Machines that can exploit their hardware to process quantum information can solve certain problems exponentially faster than purely classical (conventional) computers. To harness the potentially groundbreaking applications of quantum computers, these machines will be required to control and process quantum systems at a very large scale, potentially involving millions of high-quality quantum information carriers. While a number of challenges must be overcome before silicon photonics can support quantum computing at scale, the capabilities of mature semiconductor fabrication process to integrate large quantum photonic circuits on single devices, means this is a promising and emerging platform for quantum information processing. In this chapter, we will review recent results in developing key building blocks for chip-scale photonic quantum devices and discuss the progress towards useful large-scale quantum computers in the silicon quantum photonics platform.
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An Open Silicon Photonics Ecosystem for Computercom Applications |
Marco Fiorentino,Zhihong Huang,Di Liang,Sagi Mathai,M. Ashkan Seyedi,Raymond G. Beausoleil |
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We present progress toward an open Silicon photonics ecosystem targeted at computercom applications. The ecosystem is centered around a development kit comprising verified devices that can be laid out and simulated using industry-standard tools and fabricated in a commercial foundry. The ecosystem includes partners for testing, attaching fiber, and packaging of the finished photonics integrated circuits.
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Back Matter |
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