Titlebook: Si Detectors and Characterization for HEP and Photon Science Experiment; How to Design Detect Ajay Kumar Srivastava Book 2019 Springer Natu

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Ajay Kumar Srivastavacaused by eclipses in the time-domain. Unfortunately, a transcendental character of its dependence on . and . has made it impossible to construct a mathematical solution of the underlying problem otherwise than by successive approximations; and no one succeeded so far to express this function analyt

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,Performance of MCz Si Material for p+n−n+ and n+p−p+ Si Sensor Design: Status and Development for Hent of novel Si sensors design for the tracking area of the phase 2 upgrade of the CMS tracker detector (expected in 2026) for the HL-LHC..It is recently reported that the Magnetic Czochralski (MCz) Si material is a prime candidate for SLHC (now HL-LHC) in the mixed irradiations. The appropriate Si

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Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodesanalyze experimental measurements on non-irradiated and irradiated gated diode from the electrical characteristics of Al/SiO./n-Si (MOS) capacitors. The Capacitance-Voltage (C/V.) and Conductance-Voltage (G/ω/V.) measurement have been carried out in the frequency range of 10 kHz–800 kHz and bias vol

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Si Detector for HEP and Photon Science Experiments: How to Design Detectors by TCAD Simulation,.

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Si Detectors and Characterization for HEP and Photon Science ExperimentHow to Design Detect

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