Titlebook: Shaped Crystal Growth; Y. A. Tatarchenko Book 1993 Springer Science+Business Media Dordrecht 1993 crystal.fluid mechanics.mechanics.physic

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Book 1993he stable­ statement growth conception, which means that self-stabilization is present in the system, with growth parameter deviations occurring under the action of external perturbations attenuating with time. The crystallization rate is one of the parameters responsible for crystal defect formatio

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0926-5112 based on the stable­ statement growth conception, which means that self-stabilization is present in the system, with growth parameter deviations occurring under the action of external perturbations attenuating with time. The crystallization rate is one of the parameters responsible for crystal defec

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Introduction, of the first solid-state lasers became possible only when perfect ruby crystals with uniform dopant distribution had been grown. Microminiaturization in electronics became widespread only after the improvement of dislocation-free semiconductor crystal structure since defects of micron-fraction size

Mechanics

Techniques of Pulling from Shaper, of Equations (2.1), (2.2), the expression for the coefficients (2.3)–(2.6) and inequalities (2.10), (2.11) characterizing the stability conditions will be the same for the Czochralski technique and for TPS. Therefore we can proceed to the analysis of the melt-column shaping conditions in TPS.

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Two Shaping Elements Technique, problem for Equation (1.13) with the catching boundary conditions at the feeder free edge and the angle fixation condition at the crystal free edge (Figure 1.10). Profile curves for various pressure values for crystals 0.25 mm thick are given in Figure 8.1.

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Crystal Cross-Section Shapes,ross-section of a growing crystal when stability was analyzed. Such a consideration solves the problem of characteristic profile dimension stability, however the problem of maintaining the shape of a crystal being pulled remains unsolved.