Titlebook: Semiconductor-Laser Fundamentals; Physics of the Gain Weng W. Chow,Stephan W. Koch Textbook 1999 Springer-Verlag Berlin Heidelberg 1999 Ab

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Free-Carrier Theory,or equivalently, by the induced complex susceptibility. To determine these quantities, we need to solve the quantum mechanical gain medium equations of motion for the polarization. In principle, these dynamic equations should be derived using the full system Hamiltonian, which contains contributions

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Coulomb Effects,useful insight to the elementary physics of a semiconductor gain medium, its inadequacies show up in analyses of high-quality samples and advanced laser structures, where one clearly sees signatures of the more subtle Coulomb interaction effects among carriers. This chapter, as well as the next one,

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Correlation Effects,and without explicit expressions for the collision terms. Systematic approximations to collision contributions, which lead to carrier and polarization relaxation, as well as plasma screening, can be computed at the next higher level of approximation. In this chapter, we outline an analysis of these

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Quantum Wells, geometry. Section 6.1 shows how the envelope approximation method incorporates confinement effects into the . theory. The influence of quantum confinement on the valence band structure can be quite significant mixing especially the top two bulk semiconductor valence bands, i.e. the heavyhole and li

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Free-Carrier Theory,ry complicated. Therefore, one often makes approximations that allow one to begin with a tractable treatment that is reasonably accurate and hopefully contains the most important effects. By gradually eliminating the approximations, one works toward increasingly rigorous treatments. In this book, we take such an approach.