Titlebook: Semiconductor Surfaces and Interfaces; Winfried Mönch Book 19952nd edition Springer-Verlag Berlin Heidelberg 1995 Interfaces.Surface Proce

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Introduction,nductor heterostructures and semiconductor-insulator interfaces. Surface and interface states above the bulk valence-band maximum may become charged. Surface charge neutrality then requires the existence of space-charge layers which penetrate from the surface or interface into the semiconductor.

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Interface States,iconductor interfaces may be explained by one conceptually simple approach. This concept is again based on the virtual gap states of the complex band structure of semiconductors as well as insulators. This model assumes intimate contacts which are abrupt and free of any defects and impurities.

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Surface Passivation by Adsorbates and Surfactants,wth. At the deposition temperature, the solubility of the passivating adatoms has to be small in the bulk of the growing film so that they will segregate on the surface of the growing film. The passivating adatoms then behave as a surface-active species or a surfactant.

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Surface Space-Charge Region in Thermal Equilibrium,et charge in electronic surface or interface states. Depending on the sign and the magnitude of the surface band-bending, accumulation, depletion, and inversion layers are to be distinguished. Larger carrier concentrations in accumulation and inversion layers lead to quantum size-effects.

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{111} Surfaces of Compounds with Zincblende Structure,ee As atoms of the second layer. The atomic arrangement is thus similar to the Ga-As zigzag chains on cleaved (110)-1 × 1 surfaces. The GaAs(1̄1̄1̄)-2 × 2 reconstruction, on the other hand, consists of Astrimers on a complete As layer beneath. The presence of As vacancies is excluded since their formation is endothermic on such surfaces.

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Group-III Adatoms on Silicon Surfaces, covalent radius than silicon and, therefore, bonds between boron atoms occupying .. sites and nearest-neighbor silicon atoms would be strongly elongated. Substitutional S. sites beneath silicon atoms in .. sites are energetically much more favorable configurations for the small boron atoms.

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