Titlebook: Semiconductor Physics; An Introduction Karlheinz Seeger Textbook 19997th edition Springer-Verlag Berlin Heidelberg 1999 electrical engineer

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Semiconductor Statistics,ve seen in Fig. 2.8. A discussion of these levels can be confined to the first Brillouin zone. We saw in the last chapter that due to the crystal periodicity, the electron wave functions, which in one dimension are . exp(i . x), also have to be periodic (.). Hence, from . and . we obtain . or . wher

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Carrier Diffusion Processes,current . = -....., where .. is proportional to the electron mobility due to the Einstein relation (4.10.12). In this chapter we will investigate the diffusion of . carriers in local variations in the type of doping, which is so typical for p-n junctions and bipolar transistors.

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Scattering Processes in a Spherical One-Valley Model,anomagnetic, thermoelectric, thermomagnetic, etc., effects. We will now treat the important scattering mechanisms and find the energy dependence of τm. For those cases where a power law is found, the magnitude of the exponent . will be determined.

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Carrier Transport in the Warped-Sphere Model,his case are warped spheres which have already been discussed in Sect. 2.4 (Figs. 2.28a–2.28c). In the zincblende lattice typical for III–V compounds, there is no center of inversion, in contrast to the diamond lattice.