Titlebook: Semiconductor Devices for Power Conditioning; Roland Sittig,P. Roggwiller Book 1982 Plenum Press, New York 1982 high voltage.network.power

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Gate Turn-Off Thyristors,elopment, operating principles, device modeling, design considerations, characterization, gate circuits, and a number of applications to actual equipment. The device design is implemented on the basis of modeling and test-sample experiments. The maximum gate turn-off current is shown to vary proport

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Hay-Fever

Reverse-Conducting Thyristors,ons of such systems. This advancement is made possible by adapting the device characteristics to the cir­cuit requirements. This is particularly the case with reverse-conducting thyristors. In applications where soft commutation through an antiparallel feedback diode is used, new asymmetric device s

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IOTA

Analysis and Design of High-Power Rectifiers,hich identify the limit­ing physical mechanisms affecting forward drop in power rectifiers. In the second sec­tion, the effect of packaging variations on surge and steady-state device ratings is investigated. In the third section, the effect that gold, platinum, and electron irradia­tion have on the

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Motilin

Junction Field-Effect Devices,ectively. The principle of the junction .ield-.ffect .ransistor (JFET) was discovered by Shockley in 1952 and realized as a practical device by Dacey and Ross in 1953. Some years before, in 1950, Nishizawa and Watanabe had applied for a patent for a similar de­vice, which they called the “electrosta

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Epi and Schottky Diodes,voltage, fast diodes to minimize the losses. Reverse recovery times of 30 ns, and reverse voltages of 200 V can be achieved by replacing the double-diffused structure with an epitaxial one. The well-controlled, narrow base width allows low stored charge to be achieved, together with low forward volt