| 书目名称 | Semiconductor Device Physics and Design | | 编辑 | Umesh K. Mishra,Jasprit Singh | | 视频video | | | 概述 | A Graduate text including Problems and Solutions.Includes semiconductors device physics and design of devices based on materials that are rapidly becoming dominant such as GaN and SiGe.The Book treats | | 图书封面 |  | | 描述 | .Semiconductor Device Physics and Design. provides a fresh and unique teaching tool. Over the last decade device performances are driven by new materials, scaling, heterostructures and new device concepts. Semiconductor devices have mostly relied on Si but increasingly GaAs, InGaAs and heterostructures made from Si/SiGe, GaAs/AlGaAs etc have become important. Over the last few years one of the most exciting new entries has been the nitride based heterostructures. New physics based on polar charges and polar interfaces has become important as a result of the nitrides. Nitride based devices are now used for high power applications and in lighting and display applications. For students to be able to participate in this exciting arena, a lot of physics, device concepts, heterostructure concepts and materials properties need to be understood. It is important to have a textbook that teaches students and practicing engineers about all these areas in a coherent manner. ...Semiconductor Device Physics and Design. starts out with basic physics concepts including the physics behind polar heterostructures and strained heterostructures. Important devices ranging from p-n diodes to bipolar and f | | 出版日期 | Textbook 2008 | | 关键词 | Doping; Semiconductor; bipolar junction transistor; delta-doped field-effect transistor; field-effect tr | | 版次 | 1 | | doi | https://doi.org/10.1007/978-1-4020-6481-4 | | isbn_softcover | 978-94-007-9778-9 | | isbn_ebook | 978-1-4020-6481-4 | | copyright | Springer Science+Business Media B.V. 2008 |
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发表于 2025-3-21 17:41:54
