Titlebook: Semiconductor Device Modelling; Christopher M. Snowden Book 1989 Springer-Verlag Berlin Heidelberg 1989 VLSI.circuit.diodes.laser.modeling

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Classical and Semiclassical Models,are often regarded as being phenomenological in origin. In a broader sense, carrier transport in semiconductor devices can be characterised in terms of either classical, semiclassical or quantum physical models. The majority of contemporary devices can be adequately characterised using the generalis

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Numerical Techniques Finite Difference and Boundary Element Methods,in semiconductor devices and in this paper we will restrict ourselves to the methods of finite difference and boundary element. However, invariably the problem of solving the Poisson equation, or some simple variation of it, is required as part of the full solution procedure. Usually the complete se

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,Numerical Techniques — The Finite Element Method,y which this may be achieved is the .. A brief description of the general principles behind the finite element method is presented here. Some simple but practical numerical schemes for semiconductor device modelling are presented. The advantages and disadvantages of using finite elements for numeric

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