Titlebook: Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations; Jennifer Rupp,Daniele Ielmini,Ilia Valov Book 2022 Springer Natu

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Tohru Tsuruoka,Tsuyoshi Hasegawa,Kazuya Terabe,Masakazu Aono

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Preface,lean 1. The devices show outstanding potential for scaling down to the atomic level, integration, low-power consumption, sub-nanosecond operation time range, and digital and/or analog volatile and/or nonvolatile information storage. In these devices, the switching relies on redox reactions and mixed

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Memristive Computing Devices and Applications,fficient hardware realization of neuromorphic and analog computing architectures that differ radically from conventional von Neumann computing architectures. In this chapter, we analyze representative memristor devices and their applications, including mixed signal analog-digital neuromorphic comput

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Probing Electrochemistry at the Nanoscale: In Situ TEM and STM Characterizations of Conducting Filalaments and even individual metal nanoclusters, and have greatly facilitated the understanding of the underlying mechanisms of memristive switching. Further characterization of cyclic operations leads to additional insights into the degradation in performance, which is important for continued device

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SiO2-Based Conductive-Bridging Random Access Memory,rated circuits, which greatly lower the barrier for widespread usage and permit integration of memory with silicon-based devices. Our discussion covers materials and electrochemical theory, including the role of counter charge in these devices, as well as the current understanding of the nature of t

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Interface-Type Resistive Switching in Perovskite Materials,emical processes triggered by the application of an external voltage (or current), which ultimately lead to a change in resistance at the interface between the metal electrode and the oxide. Special attention is paid to the material aspects of interface-type switching, and in particular to how the R

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