Titlebook: Reduced Thermal Processing for ULSI; Roland A. Levy Book 1989 Plenum Press, New York 1989 Doping.defects.dielectrics.electronics.epitaxy

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Low Temperature Silicon Epitaxy for Novel Device Structures,lar and CMOS device performance. Therefore, this paper will present some very attractive new advanced device structures that are possible through the use of low temperature/low pressure (LT/LP) production worthy epitaxial growth techniques that address these ULSI submicron device processing issues.

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Micrometallization Technologies,ontact resistance, fine-line patternability, resistance to electromigration, strong adherence and good step coverage and conformality. Sometimes all of these requirements cannot be optimized simultaneously and one is forced to adopt a compromise.

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Silicidation by Rapid Thermal Processing,ty and enhanced circuit performance. This was made possible by the use of larger chip areas, but also by a continuous drive towards miniaturization, based upon the classical laws of scaling as introduced by Dennard et al. [1]. In these laws, all device dimensions are reduced by a factor λ, and other

ENACT

Microstructural Defects in Rapid Thermally Processed IC Materials,c requirements. The first of these requirements is that the “active” insulators in MOS devices must be ultra thin, typically below 10 nm thick. Using conventional furnace oxidation it is difficult to produce such thin oxides because the oxidation times are too short to be reproducibly controlled. As

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Rapid Thermal Annealing - Theory and Practice,ing technology for annealing, oxidation, interfacial reaction, solid state diffusion and many other physical changes in the silicon and its overlayers. Despite this central role, heat-treatment has for much of this time been carried out in basically the same way, in contrast to the radical changes t

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Rapid Thermal Process Integration,ted and demonstrated thoroughly over the past few years and many excellent reviews of these techniques are now available.. Hundreds of papers have been published dealing with isolated RTP process techniques such as oxidation/nitridation., junction annealing., thermal silicidation., densification and