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Titlebook: RF Power Amplifiers for Mobile Communications; Patrick Reynaert,Michiel Steyaert Book 2006 Springer Science+Business Media B.V. 2006 Balun

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发表于 2025-3-21 18:24:28 | 显示全部楼层 |阅读模式
书目名称RF Power Amplifiers for Mobile Communications
编辑Patrick Reynaert,Michiel Steyaert
视频video
概述Both theoretical analysis and practical implementations are covered.Strong emphasis on CMOS.Strong emphasis on fully integrated solutions
丛书名称Analog Circuits and Signal Processing
图书封面Titlebook: RF Power Amplifiers for Mobile Communications;  Patrick Reynaert,Michiel Steyaert Book 2006 Springer Science+Business Media B.V. 2006 Balun
描述.RF Power Amplifiers for Mobile Communications. fits in the quest for fully integrated CMOS transceivers. The book tackles both high efficiency and high linearity PA design in low-voltage CMOS, and has a strong emphasis on theory, design and implementation. The book is conceived as a design guide for those actively involved in the design of CMOS wireless transceivers....RF Power Amplifiers for Mobile Communications. starts from the basic theory of power amplification from the viewpoint of CMOS integration. The design of switching RF power amplifiers in CMOS is explored and CMOS PA design at low supply voltage using parallel amplification is discussed. Combining both efficiency and linearity is one of the major issues in CMOS PA design for wireless and mobile communications and is subsequently tackled. Different linearization techniques and approaches are discussed and polar modulation is clarified in greater detail. Finally, two CMOS PAimplementations are thoroughly covered. ...RF Power Amplifiers for Mobile Communications. offers the reader an intuitive insight in Power Amplification as well as the necessary mathematical background. The book is essential reading for RF design engi
出版日期Book 2006
关键词Balun; Bandpass; CMOS; Linearization; Memory Management Unit; Modulation; Modulator; Power Amplifiers; Switc
版次1
doihttps://doi.org/10.1007/1-4020-5117-4
isbn_softcover978-90-481-7286-3
isbn_ebook978-1-4020-5117-3Series ISSN 1872-082X Series E-ISSN 2197-1854
issn_series 1872-082X
copyrightSpringer Science+Business Media B.V. 2006
The information of publication is updating

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发表于 2025-3-21 22:49:43 | 显示全部楼层
ANALYSIS AND DESIGN OF THE CLASS E POWER AMPLIFIER IN CMOS,e difficult calculations the fact that a Class E amplifier is imposed by two time-domain equations. This inherently requires that one has to solve a set of differential equations and, more important, the correct initial conditions have to be found in order to obtain the steady-state solution of the amplifier.
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ANALYSIS AND DESIGN OF THE CLASS E POWER AMPLIFIER IN CMOS,ical calculations. As such, the design of a this amplifier was the topic for a lot of theoretical publications in the eighties. The main reason for the difficult calculations the fact that a Class E amplifier is imposed by two time-domain equations. This inherently requires that one has to solve a s
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IMPEDANCE TRANSFORMATION AND POWER COMBINATION,ngle-ended input and output impedances of 50Ω. If a power amplifier, designed in a low-voltage CMOS technology, is directly connected to this 50Ω resistance, the output power will be low; a sine wave with an amplitude of 1V across a 50Ω resistor results in an output power of only 10mW.
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Book 2006gh linearity PA design in low-voltage CMOS, and has a strong emphasis on theory, design and implementation. The book is conceived as a design guide for those actively involved in the design of CMOS wireless transceivers....RF Power Amplifiers for Mobile Communications. starts from the basic theory o
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