Titlebook: Quantum Well Intersubband Transition Physics and Devices; H. C. Liu,B. F. Levine,J. Y. Andersson Book 1994 Springer Science+Business Media

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山羊

Background Limited 128×128 GaAs/AlGaAs Multiple Quantum well Infrared Focal Plane Arrayoperating temperature. Also reported is progress in improving the effective quantum efficiency to about 10% with low optical crosstalk using two-dimensional gratings, resonant cavity structure and mechanical thinning. This work was performed under DARPA Contract N00014-91-C-0163 for Mr. Raymond Balc

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灌溉

Intersubband Absorption in N - type Si and Ge Quantum Wellshe doping concentration, the band offset or both. The polarization angle dependencies of the absorption spectra were also obtained from waveguide structures. These results offer the opportunity for the application of focal plane arrays and of integration with Si integrated circuits built on Si subst

Proponent

Random Scattering Optical Couplers for Quantum Well Infrared PhotodetectorsDetailed measurements on random scattering optical couplers for quantum well infrared photoconductors are presented. By optimizing the scattering parameters, we have achieved an order of magnitude improvement in optical absorption, responsivity and detectivity compared with the 45° angle of incidence geometry, or a one-dimentional grating coupler.

独白

explicit

16 μm Infrared Hot Electron TransistorWe have demonstrated a bound to continuum state GaAs/Al.Ga.As infrared hot electron transistor which has a peak response at λ. = 16.3 μm. An excellent photo-current transfer ratio of α.= 0.12 and very low dark current transfer ratio of α. = 7.2×10. is achieved at a temperature of T = 60 K.

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