Titlebook: Quantum Dots: Fundamentals, Applications, and Frontiers; Proceedings of the N Bruce A. Joyce,Pantelis C. Kelires,Dimitri D. Vved Conference

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Formation of Two-Dimensional Si/Ge Nanostructures Observed by STMm was measured using scanning tunneling microscopy (STM). The potential formation of thermodynamically stable strained islands of a specific size is discussed. The formation of 2D Si/Ge nanostructures at preexisting defects is studied. The step-flow growth mode is used to fabricate Si and Ge nanowir

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Diffusion, Nucleation and Growth on Metal Surfaceshigh symmetry surface such as Cu(001), a beam of Cu atoms is deposited on the surface. Within a broad range of experimental conditions, the adsorbed atoms diffuse and nucleate into islands. The process of island nucleation and growth in the sub-monolayer regime is studied using both rate equations (

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Off-Lattice KMC Simulations of Stranski-Krastanov-Like Growtharlo simulations. Our modified Lennard—Jones system displays the so-called Stranski—Krastanov growth mode: initial pseudomorphic growth ends by the sudden appearance of strain induced multilayer islands upon a persisting wetting layer.

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Temperature Regimes of Strain-Induced InAs Quantum Dot Formation the growth parameters such as temperature and flux. The QDs are grown using solid-source molecular-beam epitaxy on GaAs and AlAs substrates and investigated with . electron diffraction, x-ray diffraction techniques, and atomic force microscopy. The experimental data of the critical time up to quant

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Ge/Si Nanostructures with Quantum Dots Grown by Ion-Beam-Assisted Heteroepitaxyxy (MBE) of Ge on Si(100). Continuous and pulsed ion-beams were used. STM studies have shown that ion-beam action during heteroepitaxy leads to decrease in critical film thickness for transition from two-dimensional (2D) to three-dimensional (3D) growth modes, enhancement of 3D island density and na

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The Search for Materials with Self-Assembling Properties: The Case of Si-Based Nanostructureses. A good candidate is a metal-semiconductor compounds group, most notably metal silicides. As will be shown below, the disilicides of cobalt and titanium form distinct nanodot arrays on silicon, of a significantly smaller mean size, and substantially improved size and shape uniformity, as compared

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X-Ray Scattering Methods for the Study of Epitaxial Self-Assembled Quantum Dotsrain gradients. Two different routes are followed: in the first approach, the scattered intensities are simulated using numerical fitting to a suitable structure model for the islands (indirect methods). In the second one, the structural data are directly derived from the experimental ones. This dir