| 书目名称 | Power GaN Devices | | 副标题 | Materials, Applicati | | 编辑 | Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanon | | 视频video | | | 概述 | Presents a comprehensive review of the properties and fabrication methods of GaN-based power transistors.Describes advantages of GaN-based systems, details of specific device structures and discusses | | 丛书名称 | Power Electronics and Power Systems | | 图书封面 |  | | 描述 | .This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption..The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass p | | 出版日期 | Book 2017 | | 关键词 | GaN-based nanowire transistors; GaN-based power transistors; GaN-based vertical transistors; Gallium ni | | 版次 | 1 | | doi | https://doi.org/10.1007/978-3-319-43199-4 | | isbn_softcover | 978-3-319-82756-8 | | isbn_ebook | 978-3-319-43199-4Series ISSN 2196-3185 Series E-ISSN 2196-3193 | | issn_series | 2196-3185 | | copyright | Springer International Publishing Switzerland 2017 |
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发表于 2025-3-21 18:43:45
