| 书目名称 | Point Defects in Semiconductors I |
| 副标题 | Theoretical Aspects |
| 编辑 | Michel Lannoo,Jacques Bourgoin |
| 视频video | |
| 丛书名称 | Springer Series in Solid-State Sciences |
| 图书封面 |  |
| 描述 | From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of ‘band theory‘ can be safely used to study its interesting electronic properties. Thus in these covalent crystals, the electronic structure is only weakly coupled with the atomic vibrations; one-electron Bloch functions can be used and their energy bands can be accurately computed in the neighborhood of the energy gap between the valence and conduction bands; nand p doping can be obtained by introducing substitutional impurities which only introduce shallow donors and acceptors and can be studied by an effective-mass weak-scattering description. Yet, even at the beginning, it was known from luminescence studies that these simple concepts failed to describe the various ‘deep levels‘ introduced near the middle of the energy gap by strong localized imperfections. These imperfections not only include some interstitial and many substitutional atoms, but also ‘broken bonds‘ associated with surfaces and interfaces, dis location cores and ‘vacancies‘, i.e., vacant iattice sites in the crystal. In all these cases, the electronic structure can be str |
| 出版日期 | Book 1981 |
| 关键词 | Gitterfehler; Halbleiter; band structure; band theory; crystal; crystal structure; crystallographic defect |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-3-642-81574-4 |
| isbn_softcover | 978-3-642-81576-8 |
| isbn_ebook | 978-3-642-81574-4Series ISSN 0171-1873 Series E-ISSN 2197-4179 |
| issn_series | 0171-1873 |
| copyright | Springer-Verlag Berlin Heidelberg 1981 |
发表于 2025-3-21 17:51:40
