Titlebook: Oriented Crystallization on Amorphous Substrates; E. I. Givargizov Book 1991 Springer Science+Business Media New York 1991 computer.electr

断言

ngruenter Schmelzpunkt angegeben wird, und zwar wird jede dieser beiden sich widersprechenden Sachverhalte von etwa gleich vielen Forschern beschrie­ ben. Dies führt zu der Annahme, daß eine grundsätzliche Ursache für diese ver­ schiedenen Untersuchungsergebnisse vorliegen muß. Betrachtet man nun di

radiograph

讥笑

Small Particles,the thickness of the films, when formed, is in this range, the films consist of crystalline grains that obviously measure no more than 0.1–1 µm in at least one dimension. Moreover, for thermodynamic reasons (e.g., surface-energy effects), the films tend to agglomerate from small grains that measure

HAVOC

Obedient

Characterization of Oriented Films on Amorphous Substrates,ircuits, and the like. With this objective in mind, much attention must be paid to the electronic properties of the films, such as the mobility and lifetime of charge carriers, leakage currents, conductance, and interface charges and states. These properties depend, in turn, on the microstructure of

faction

不透明

Applications,sulators. Indeed, on one hand, semiconductor properties are most sensitive to crystalline structure—as a rule, perfect single crystals or single-crystalline films are necessary for effective semiconductivity. On the other hand, amorphous substrates are mostly insulating ones. Accordingly, in this ch

Bernstein-test

Conclusion,oriented films (including single-crystalline films) on arbitrary substrates compete with each other. At the moment, it is still unclear which will win. Moreover, it is quite likely that some specializations in the pairing of “technique vs. device” (or “circuit”) will be established in the future, so

TAG

Other Approaches to Oriented Crystallization on Amorphous Substrates,In addition to artificial epitaxy, there are other approaches to oriented crystallization on amorphous substrates. These approaches differ from artificial epitaxy mainly in mechanism(s) of achievement of oriented growth; however, some of them have much in common with artificial epitaxy in processing apparatus and techniques.

FOVEA

Experimental Techniques for Oriented Crystallization on Amorphous Substrates,In Chapters 3 and 4, when considering various approaches to oriented crystallization on amorphous substrates, I mentioned different techniques and/or facilities that offer possibilities for carrying out one or another process of crystallization. In this chapter, I briefly describe the techniques and facilities in a systematic manner.