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Titlebook: Organic Solar Cells; Theory, Experiment, Wolfgang Tress Book 2014 Springer International Publishing Switzerland 2014 Bulk Heterojunction.H

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ReferencesThe discussed simulation results were obtained using a self-made drift-diffusion solver.
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Springer Series in Materials Sciencehttp://image.papertrans.cn/o/image/703877.jpg
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https://doi.org/10.1007/978-3-319-10097-5Bulk Heterojunction; Hole Transport Layer and Donor Materials; Injection and Extraction Barriers; Open-
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Photovoltaic Energy Conversiond electrical requirements for an ideal photovoltaic device and show examples of possible realizations based on semiconductors. To recall the basics, a brief review on semiconductor physics with emphasis on the p-n junction is given. We discuss the role of the electrochemical potential as driving for
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Modelingulation in this chapter. The first part deals with drift-diffusion simulation in general including the Einstein relation. In the second part, specific models for physical processes are discussed, which range from mobility and recombination models to the description of CT states, traps, interface bar
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Simulation Study on Single-Layer Bulk-Heterojunction Solar Cells approach discussed in the previous chapter and compare the results to the predictions of approximated analytical solutions introduced in Chap. .. In particular we investigate the interplay between mobilities and different recombination mechanisms and their effect on the fill factor and the open-cir
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Interplay Between Electrodes and Active Materials: The Open-Circuit Voltage and S-shaped , Curvesthe interface between a hole-transport layer and the donor is selected. This interface serves as a model system for a contact between active layer and electrode in general. Different values for the HOMO levels of both organic materials give rise to barriers for injection or extraction of charge carr
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Further Origins of S-shaped , Curveshe . curve, which is related to a change in the working regime of the device. Often, they are manifest with decreased solar-cell performance. Consequently, it is desired to remove them based on the knowledge of their origin. In the previous chapter, barriers at electrodes have been discussed as poss
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