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Titlebook: Optimisation of ZnO Thin Films; Implants, Properties Saurabh Nagar,Subhananda Chakrabarti Book 2017 Springer Nature Singapore Pte Ltd. 2017

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发表于 2025-3-21 17:53:33 | 显示全部楼层 |阅读模式
书目名称Optimisation of ZnO Thin Films
副标题Implants, Properties
编辑Saurabh Nagar,Subhananda Chakrabarti
视频video
概述Covers implantation in ZnO based thin films to optimize device performance.Will be specifically useful for optoelectronics in the UV region.Includes hydrogen implantation studies for improved optimiza
图书封面Titlebook: Optimisation of ZnO Thin Films; Implants, Properties Saurabh Nagar,Subhananda Chakrabarti Book 2017 Springer Nature Singapore Pte Ltd. 2017
描述.This monograph describes the different implantation mechanisms which can be used to achieve strong, reliable and stable p-type ZnO thin films. The results will prove useful in the field of optoelectronics in the UV region. This book will prove useful to research scholars and professionals working on doping and implantation of ZnO thin films and subsequently fabricating optoelectronic devices. The first chapter of the monograph emphasises the importance of ZnO in the field of optoelectronics for ultraviolet (UV) region and also discusses the material, electronic and optical properties of ZnO. The book then goes on to discuss the optimization of pulsed laser deposited (PLD) ZnO thin films in order to make successful p-type films. This can enable achievement of high optical output required for high-efficiency devices. The book also discusses a hydrogen implantation study on the optimized films to confirm whether the implantation leads to improvement in the optimized results..
出版日期Book 2017
关键词II-VI semiconductors; Zinc oxide thin films; Quantum LEDs; Photodetectors; Pulsed laser deposition; Sputt
版次1
doihttps://doi.org/10.1007/978-981-10-0809-2
isbn_softcover978-981-10-9257-2
isbn_ebook978-981-10-0809-2
copyrightSpringer Nature Singapore Pte Ltd. 2017
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Summary and Future Works,The summary of the work and future work has been discussed in this chapter.
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978-981-10-9257-2Springer Nature Singapore Pte Ltd. 2017
发表于 2025-3-22 13:31:45 | 显示全部楼层
Introduction,odes (LDs) and light-emitting diodes (LEDs) in the ultraviolet region because of its wide bandgap (3.437 eV at 2 K) and a large excitonic binding energy of 60 meV at room temperature. However, because of intrinsic defects such as oxygen vacancies and zinc interstitials, ZnO is intrinsically deposite
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Optimisation of PLD Parameters,ntrinsic n-type nature of the deposited ZnO films. Hence, for successful conversion of its carriers from n-type to p-type, it is desirable that the deposited ZnO film has as low an electron concentration as possible. Moreover, for the fabrication of optoelectronic devices, the films should have very
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Fabrication of Optoelectronics Devices,tion diode was fabricated by depositing p-type ZnO films over low resistivity n-Si substrates. The p-type ZnO was achieved by phosphorus as well as nitrogen implantation. The current–voltage characteristics of the fabricated p–n heterojunction diode showed a clear rectifying behaviour with a thresho
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