Titlebook: Optical and Electronic Process of Nano-Matters; Motoichi Ohtsu Book 2001 Springer Science+Business Media Dordrecht 2001 Evanescent wave.Op

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BIPED

Electron Transport in Semiconductor Quantum Dots,ble to the de Broglie wavelength of electrons. Transport measurements on these nanostructures have revealed a rich variety of phenomena associated with the effects of quantum mechanical confinement [1]. Conductance quantization in one-dimensional quantum point contacts, and resonant tunneling throug

简洁

Electron Energy Modulation with Optical Evanescent Waves,to ultraviolet rays. Many kinds of electron beam devices, including the klystron, traveling wave tube (TWT), and backward wave oscillator (BWO), have been developed [1]. These beam devices have several advantages over semiconductor devices, such as a wide frequency tuning range and higher output pow

阴谋

Immunization

Theory of Electronic and Atomic Processes in Scanning Probe Microscopy,ls science, i.e., the science of nano-scale materials has been brought about thanks to the development of SPM. In spite of the rapid development in SPM as an experimental tool, however, a firm theoretical basis for it has not in general been fully established. It is only for the fundamental aspects

Chipmunk

Tunneling-Electron Luminescence Microscopy for Multifunctional and Real-Space Characterization of Snd these properties are very different from those in macroscopic structures. [1] Progress in crystal growth and micro-process technology has enabled the atomically controlled fabrication of artificial semiconductor nanostructures and devices. These have been actively studied for the purpose of achie

arthroscopy

Near-Field Optical Spectroscopy of Single Quantum Dots, highly localized features and their distributions well beyond the diffraction limit of light [1–7]. The heart of NSOM is a near-field probe, illustrated in Fig. 7.1 which is a metal-coated optical fiber tapered to an opening (aperture) which is much smaller than the wavelength of light. When the pr

chemoprevention

上腭

Noncontact Atomic Force Microscopy,face images of both conductors and insulators. For several layered and nonlayered materials [2–5], atomic resolution has been achieved in the contact mode. However, the question has been raised as to whether the AFM operating in the contact mode is really a microscope like the scanning tunneling mic

掺和

Correlation between Interface States and Structures Deduced from Atomic-Scale Surface Roughness in eliability of ultrathin gate oxides. [2] Because the thickness of the structural transition layer is in the order of 1 nm [3,4] and the amount of electronic defect states in the structural transition layer must be larger than that in bulk SiO., the reliability of gate oxides must be mainly determine