Titlebook: Optical Properties of Semiconductor Nanostructures; Marcin L. Sadowski,Marek Potemski,Marian Grynberg Book 2000 Springer Science+Business

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Near-Field Spectroscopy of a Gated Electron Gasnning a tapered Optical fibre tip with an aperture of 250 nm in the near field region of the sample surface, and collecting the photoluminescence. The spectral line of the negatively charged exciton, formed by binding of a photo-excited electron-hole pair to an electron, serves as an indicator for t

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A Far Infrared Modulated Photoluminescence (FIRM-PL) Study of a 2-D Electron Gas in GaAs/AlxGa1-XAs series of GaAs/AlGaAs heterojunctions and quantum wells. When the occupancy of the lowest Landau level is between 1 and 2 very large transfers of PL intensity are observed at the cyclotron resonance condition. The PL intensity is transferred from the E. line to E. corresponding to emission from the

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Spectrum Shape Analysis of Magnetoreflectivity and Magnetorotation of Polarisation Plane of Light Rera are explained using transfer matrix calculations. Evidence of the magneto-polariton in GaAs (cap or bulk) has been shown. A large reduction of spin polarisation of the 2DEG measured by means of the MOKE in the region of Landau filling factors 1≤v<4, has been found.

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