Titlebook: Optical Phenomena in Semiconductor Structures of Reduced Dimensions; David J. Lockwood,Aron Pinczuk Book 1993 Springer Science+Business Me

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Optical Spectroscopy in the Regimes of the Integer and Fractional Quantum Hall Effects,ion of the 2D electron system with acceptors in the Si devices showed anomalies at the Landau level filling factors v = p/q of the fractional quantum Hall effect [1]. The results of intrinsic optical emission from the modulation doped quantum wells revealed temperature-dependent intensity anomalies at v = 1 and v = 2/3 [2].

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Electron Spin Resonance and Nuclear Spin Relaxation in GaAs/AlgaAs Heterostructures,-dimensional systems whereas the ESR energy is well described within the single-electron picture for the bandstructure. The difference between the enhanced and the bare spin splitting is proportional to the exchange energy which has typical values of 2-3 meV.

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Electron Spin Resonance and Nuclear Spin Relaxation in GaAs/AlgaAs Heterostructures,ar spin polarization (via the shift of the ESR line by the Overhauser shift), and the nuclear spin-lattice relaxation process which is dominated by the Korringa relaxation due to the conduction electrons. The Korringa relaxation rate depends on the product of the density of states of electrons at th