Titlebook: Optical Constants of Crystalline and Amorphous Semiconductors; Numerical Data and G Sadao Adachi Book 1999 Springer Science+Business Media

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Introductory RemarksThis book contains optical-constant data of crystalline and amorphous semiconductors. The semiconductor materials examined are the group-IV elemental and binary (Diamond, Si, SiC, etc.), III–V (AIP, GaAs, InSb, etc.), II–VI (MgO, ZnSe, CdTe, etc.), and IV–VI binary semiconductors (PbS, PbSe, SnTe, etc.), and their alloys.

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Rhombohedral Silicon Carbide (15R-SiC)The occurrence of a large number of polytypes in SiC and the strong influence this has on many of its properties is well known. Rhombohedral (trigonal) 15R-SiC is the second commonest polytype. Rhombohedral polytypes, such as 21R- and 27R-SiC, have also been identified but very rarely.

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Germanium (Ge)ning technique has led to production of ultrahigh-purity Ge single crystals. It is a very important semiconducting material used as a transistor element and also for optoelectronic device applications, including extremely sensitive IR photo-detectors.

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Aluminum Nitride (AIN)(∼∣2−5∣×10. cm/V at 300 K) (see Ref. [1]). AIN has also excellent insulator and passivation properties, low dispersion of permittivity, and low dielectric loss. These make it useful for numerous device applications (see, ., Ref. [2]).

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