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Titlebook: New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface; Lachlan E. Black Book 2016 Springer International Publishin

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发表于 2025-3-21 18:07:30 | 显示全部楼层 |阅读模式
书目名称New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface
编辑Lachlan E. Black
视频videohttp://file.papertrans.cn/666/665644/665644.mp4
概述Nominated as an outstanding PhD thesis by The Australian National University, Canberra.Gives new insights into semiconductor–dielectric interfaces and semiconductor surface recombination mechanisms.Re
丛书名称Springer Theses
图书封面Titlebook: New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface; Lachlan E. Black Book 2016 Springer International Publishin
描述..The book addresses the problem ofpassivation at the surface of crystalline silicon solar cells. Morespecifically, it reports on a high-throughput, industrially compatibledeposition method for Al2O3, enabling its application to commercial solar cells.One of the main focus is on the analysis of the physics of Al2O3 as apassivating dielectric for silicon surfaces. This is accomplished through a comprehensivestudy, which moves from the particular, the case of aluminium oxide on silicon,to the general, the physics of surface recombination, and is able to connecttheory with practice, highlighting relevant commercial applications...
出版日期Book 2016
关键词Surface Recombination Theory; Passivation Performance; Passivating Dielectrics; Deposition of Al2O3; Atm
版次1
doihttps://doi.org/10.1007/978-3-319-32521-7
isbn_softcover978-3-319-81307-3
isbn_ebook978-3-319-32521-7Series ISSN 2190-5053 Series E-ISSN 2190-5061
issn_series 2190-5053
copyrightSpringer International Publishing Switzerland 2016
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Al,O, Deposition and Characterisation,amined in this work was performed by the APCVD method, except in a few cases where . was deposited by ALD. Therefore we begin in Sect. . with a detailed description of the APCVD deposition technique and the APCVD system used to deposit the . passivation layers, including a discussion of the various
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Influence of Deposition Parameters,ese states, and hence the passivation properties of the interface, depend sensitively on the conditions under which this interface is formed, and therefore on the parameters of the deposition process in question. As described in Chap. ., for APCVD the main deposition parameters which may be adjusted
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Effect of Post-Deposition Thermal Processing,for Al.O. films deposited at lower temperatures, some thermal treatment is generally required to “activate” the passivation. This step most commonly takes the form of an anneal performed at a temperature of 400–., typically in an . ambient. In Chap. . it was shown that the APCVD Al.O. films examined
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Lachlan E. Black not our internal state. For Seneca we travel for reasons of which we are unaware, often unwittingly trying to escape our fears and issues or just following what other people do. His consequent recommendation is that instead of traveling we should each develop knowledge which addresses our self-igno
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