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Titlebook: Neutron Transmutation Doping in Semiconductors; Jon M. Meese Book 1979 Plenum Press, New York 1979 Potential.circuit.computer.energy.indus

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书目名称Neutron Transmutation Doping in Semiconductors
编辑Jon M. Meese
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图书封面Titlebook: Neutron Transmutation Doping in Semiconductors; Jon M. Meese Book 1979 Plenum Press, New York 1979 Potential.circuit.computer.energy.indus
描述This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con­ ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna­ tional in scope.
出版日期Book 1979
关键词Potential; circuit; computer; energy; industry; integrated circuit; material; processing; radiation; resonanc
版次1
doihttps://doi.org/10.1007/978-1-4684-8249-2
isbn_softcover978-1-4684-8251-5
isbn_ebook978-1-4684-8249-2
copyrightPlenum Press, New York 1979
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Nuclear Transmutation Doping from the Viewpoint of Radioactivity Formationation for doping other semiconductor material as well, such as germanium, arsenic or III-V compounds, this application appears to founder on the considerably greater radiation protection problems involved.
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Study of the Spatial Characteristics of the Breakdown Process in Silicon PN-Junctionsdegree of dopant uniformity through NTD. Then, using the tool of a scanned, finely focused, optical beam, we indicate how the spatial area and general characteristics of breakdown can be visualized in silicon PN-junctions fabricated from NTD and other types of silicon. We will present scans of the p
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