Titlebook: Narrow Gap Semiconductors 2007; Proceedings of the 1 Ben Murdin,Steve Clowes Conference proceedings 20081st edition Springer Science+Busine

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Picosecond Carrier Dynamics in Narrow-Gap Semiconductors studied by Terahertz Radiation Pulsesy induced THz pulse absorption transients provided with important insights on the electron energy relaxation in the conduction band. In the second set of experiments THz generation from the surfaces of various semiconductors have been studied and compared. A substantial increase of the emitted THz p

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Growth and Characterisation of Dilute Antimonide Nitride Materials for Long Wavelength Applicationso the influence of band-gap bowing. We report the growth of GaN.Sb. and InN.Sb. by MBE, using an r.f. plasma nitrogen source. We demonstrate high structural quality, as determined by XRD, and FTIR absorption measurements show a shift in the cut-off wavelength to over 3 μm for GaNSb and over 11 μm fo

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Electron Interband Breakdown in a Kane Semiconductor with a Degenerate Hole Distributione Kane band dispersion law and highly degenerate hole distribution. This is an unusual system where the ionization threshold is electric field dependent because the ionization in it takes place from the hole Fermi level which itself changes during the breakdown process. We found that a specific mech

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Growth of InAsSb Quantum Wells by Liquid Phase Epitaxyres based on InAsSb/InAsSbP. Typical characteristics of some of these prototype sources are presented and analyzed, including the results of SEM, X-ray diffraction, photo- and electro- luminescence characteristics of prototype DH & QW devices. LPE growth of InAsSb QW has been successfully obtained e

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uctor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as nove978-1-4020-8425-6