Titlebook: Nanoparticles from the Gasphase; Formation, Structure Axel Lorke,Markus Winterer,Christof Schulz Book 2012 Springer-Verlag Berlin Heidelber

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该得

Material and Doping Contrast in III/V Nanowires Probed by Kelvin Probe Force Microscopytransitions and estimating the width of their depletion layers. Additionally, the p–n junction can be localized with a resolution better than 50 nm and the bias dependence of the depletion layer width can be studied.

INCH

Optical Properties of Silicon Nanoparticlestion dynamics allows to determine the size-dependence of the oscillator strength, which is in the order of 10. and increases with decreasing particle size. Finally, we demonstrate an electroluminescence device based on silicon particles using impact ionization.

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Projection

流逝

Essential

适宜

Metal Oxide Thin-Film Transistors from Nanoparticles and Solutionshe example of SnO. and In.O., (2) a wet-deposition of nanodispersions of ZnO, and (3) a deposition of liquid precursors with subsequent transformation into the semiconducting oxide, on the example of ZnO. The advantages and disadvantages of the several methods are discussed critically also with respect to results from the literature.

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恭维

Chemical Vapor Synthesis of Nanocrystalline Oxides influence powder characteristics. The mode in which energy is supplied to the particle synthesis reactor has also substantial influence on particle and powder characteristics as is shown for TiO. using different time-temperatureprofiles.