Titlebook: Nano Devices and Circuit Techniques for Low-Energy Applications and Energy Harvesting; Chong-Min Kyung Book 2016 Springer Science+Business

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Chong-Min KyungOffers detailed coverage of key devices, circuits, systems and materials technology with a focus on practical low-energy applications.Provides in-depth description of three key devices, the FinFET, th

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978-94-024-0428-9Springer Science+Business Media Dordrecht 2016

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Nano Devices and Circuit Techniques for Low-Energy Applications and Energy Harvesting978-94-017-9990-4Series ISSN 2214-2541 Series E-ISSN 2214-255X

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Bulk FinFETs: Design at 14 nm Node and Key Characteristicsation by single charge trap is studied in terms of the trap depth, trap position, and percolation path. In the design of 14 nm bulk FinFETs, a punch-through stopper at a position just under the S/D junction depth is required to suppress unwanted cross-talk between S and D. The peak concentration of

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Ultralow Power Processor Design with 3D IC Operating at Sub/Near-Threshold Voltagesrther improvement due to 3D implementation. In addition, 3D designs reduce the footprint area up to 78 % and wire length up to 33 % compared with the 2D counterpart. Our studies also show that thermal and IR-drop issues are negligible in subthreshold 3D implementation due to its extreme low power op

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Graphene and Two-Dimensional Transition Metal Dichalcogenide Materials for Energy-Related Applicatio nanoscale devices used in energy harvesting/conversion and storage applications. Recently, 2D-TMDs are also attracting significant attention in many energy-related applications. In this chapter, we focus on the recent advances in graphene (including graphene oxide, GO) and 2D-TMD nanosheets researc

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Book 2016as to develop common platforms on which various devices and sensors can be loaded, and to create systems offering significant improvements in information processing speed, energy usage, and size. .The book contains extensive reference lists and with over 200 figures  introduces the reader to the gen