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Titlebook: Nanolithography; A Borderland between M. Gentili,C. Giovannella,S. Selci Book 1994 Springer Science+Business Media Dordrecht 1994 AES.PAS.P

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书目名称Nanolithography
副标题A Borderland between
编辑M. Gentili,C. Giovannella,S. Selci
视频video
丛书名称NATO Science Series E:
图书封面Titlebook: Nanolithography; A Borderland between M. Gentili,C. Giovannella,S. Selci Book 1994 Springer Science+Business Media Dordrecht 1994 AES.PAS.P
描述Success in the fabrication of structures at the nanometerlength scale has opened up a new horizon to condensed matter physics:the study of quantum phenomena in confined boxes, wires, rings, etc. Anew class of electronic devices based on this physics has beenproposed, with the promise of a new functionality for ultrafast and/orultradense electronic circuits. Such applications demand highlysophisticated fabrication techniques, the crucial one beinglithography. ..Nanolithography. contains updated reviews by major experts on thewell established techniques -- electron beam lithography (EBL), X-raylithography (XRL), ion beam lithography (IBL) -- as well as onemergent techniques, such as scanning tunnelling lithography (STL)..
出版日期Book 1994
关键词AES; PAS; PED; REM; STEM; STM
版次1
doihttps://doi.org/10.1007/978-94-015-8261-2
isbn_softcover978-90-481-4388-7
isbn_ebook978-94-015-8261-2Series ISSN 0168-132X
issn_series 0168-132X
copyrightSpringer Science+Business Media Dordrecht 1994
The information of publication is updating

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Nanolithography Developed Through Electron-Beam-Induced Surface Reactioncrylate (PMMA) resist patterns and 14 nm diameter carbon dot patterns have been demonstrated by 50 kV scanning electron microscope (SEM)-EBISED. A tungsten rod pattern with 15 nm diameter and carbon dot patterns with 10 nm diameters have been fabricated by scanning transmission microscope (STEM)-EBI
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Sub-10nm Electron Beam Lithography: -AIF3-Doped Lithium Fluoride as a Resisted a variety of quantum effects such as Aharonov-Bohm oscillations [1], universal conductance fluctuations [2], persistent currents [3], single-electron effects [4], etc. In any case, these phenomena are only detectable at sufficiently low temperatures in the Kelvin range or below. Especially for me
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Fabrication of Ultrasmall InGaAs/InP Nanostructures by High Voltage Electron Beam Lithography and Wehe wires down to 16 nm have been achieved. The wires show strong photoluminescence emission even for geometrical widths less than 20 nm and without overgrowth. The weak decrease of the quantum efficiency with decreasing wire width indicates that there is no significant damage at the sidewalls of the
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Fabrication, investigation and manipulation of artificial nanostructures the improvement of the fabrication technology for the future use of these low-dimensional structures in optoelectronic devices has emerged growing interest over the past few years. The use of high resolution electron beam lithography is a very variable, direct technological approach for the fabrica
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Nano-Lithography in 3 Dimensions with Electron Beam Induced Depositiona very fine electron beam in a dedicated field emission scanning electron microscope renders nanometer size deposits which extend from surfaces to heights in the micrometer range. Having an image processor attached to the microscope gives the capability to control the two- and three-dimensional depo
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Nanolithography Requirements — An Equipment Manufacturers Viewg technique. The many diverse system component technologies which combine to provide EBL as we know it, have been well researched and developed for the more industrially based microlithography field. Fortunately most of these important component techniques can be scaled downwards, at least over the
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