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Titlebook: Multigate Transistors for High Frequency Applications; K. Sivasankaran,Partha Sharathi Mallick Book 2023 The Editor(s) (if applicable) and

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发表于 2025-3-21 16:38:30 | 显示全部楼层 |阅读模式
书目名称Multigate Transistors for High Frequency Applications
编辑K. Sivasankaran,Partha Sharathi Mallick
视频videohttp://file.papertrans.cn/641/640445/640445.mp4
概述Discusses RF Stability for Multigate Transistors.Highlights pedagogical features of RF modeling, design optimization of multigate transistors.Illustrations/diagrams and tables of results are included
丛书名称Springer Tracts in Electrical and Electronics Engineering
图书封面Titlebook: Multigate Transistors for High Frequency Applications;  K. Sivasankaran,Partha Sharathi Mallick Book 2023 The Editor(s) (if applicable) and
描述.This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry..
出版日期Book 2023
关键词Multigate Transistor; RF Stability; High Frequency; Small Signal Parameter; Cut-off Frequency; Maximum Os
版次1
doihttps://doi.org/10.1007/978-981-99-0157-9
isbn_softcover978-981-99-0159-3
isbn_ebook978-981-99-0157-9Series ISSN 2731-4200 Series E-ISSN 2731-4219
issn_series 2731-4200
copyrightThe Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Singapor
The information of publication is updating

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发表于 2025-3-21 23:25:12 | 显示全部楼层
2731-4200 is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry..978-981-99-0159-3978-981-99-0157-9Series ISSN 2731-4200 Series E-ISSN 2731-4219
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发表于 2025-3-22 06:45:13 | 显示全部楼层
Book 2023equency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry..
发表于 2025-3-22 12:17:45 | 显示全部楼层
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Springer Tracts in Electrical and Electronics Engineeringhttp://image.papertrans.cn/n/image/640445.jpg
发表于 2025-3-23 01:17:08 | 显示全部楼层
https://doi.org/10.1007/978-981-99-0157-9Multigate Transistor; RF Stability; High Frequency; Small Signal Parameter; Cut-off Frequency; Maximum Os
发表于 2025-3-23 02:14:00 | 显示全部楼层
K. Sivasankaran,Partha Sharathi MallickDiscusses RF Stability for Multigate Transistors.Highlights pedagogical features of RF modeling, design optimization of multigate transistors.Illustrations/diagrams and tables of results are included
发表于 2025-3-23 08:41:44 | 显示全部楼层
Multigate Transistors for High Frequency Applications
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