找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: Minimizing and Exploiting Leakage in VLSI Design; Nikhil Jayakumar,Suganth Paul,Sunil P. Khatri Book 2010 Springer-Verlag US 2010 ASIC.EDA

[复制链接]
查看: 32393|回复: 35
发表于 2025-3-21 18:43:36 | 显示全部楼层 |阅读模式
书目名称Minimizing and Exploiting Leakage in VLSI Design
编辑Nikhil Jayakumar,Suganth Paul,Sunil P. Khatri
视频video
概述Provides a variety of approaches to control and exploit leakage.Examines the issues with implementing sub-threshold logic and describes techniques to tackle these issues.Presents a new, practical self
图书封面Titlebook: Minimizing and Exploiting Leakage in VLSI Design;  Nikhil Jayakumar,Suganth Paul,Sunil P. Khatri Book 2010 Springer-Verlag US 2010 ASIC.EDA
描述.Power consumption of VLSI (Very Large Scale Integrated) circuits has been growing at an alarmingly rapid rate. This increase in power consumption, coupled with the increasing demand for portable/hand-held electronics, has made power consumption a dominant concern in the design of VLSI circuits today. Traditionally, dynamic (switching) power has dominated the total power consumption of an IC. However, due to current scaling trends, leakage power has now become a major component of the total power consumption in VLSI circuits. Leakage power reduction is especially important in portable/hand-held electronics such as cell-phones and PDAs. This book presents two techniques aimed at reducing leakage power in digital VLSI ICs. The first technique reduces leakage through the selective use of high threshold voltage sleep transistors. The second technique reduces leakage by applying the optimal Reverse Body Bias (RBB) voltage. This book also shows readers how to turn the leakage problem into an opportunity, through the use of sub-threshold logic..
出版日期Book 2010
关键词ASIC; EDA; Electronic Design Automation; Leakage; Low Power Design; Sub-threshold logic; Transistor; VLSI; V
版次1
doihttps://doi.org/10.1007/978-1-4419-0950-3
isbn_softcover978-1-4899-8529-3
isbn_ebook978-1-4419-0950-3
copyrightSpringer-Verlag US 2010
The information of publication is updating

书目名称Minimizing and Exploiting Leakage in VLSI Design影响因子(影响力)




书目名称Minimizing and Exploiting Leakage in VLSI Design影响因子(影响力)学科排名




书目名称Minimizing and Exploiting Leakage in VLSI Design网络公开度




书目名称Minimizing and Exploiting Leakage in VLSI Design网络公开度学科排名




书目名称Minimizing and Exploiting Leakage in VLSI Design被引频次




书目名称Minimizing and Exploiting Leakage in VLSI Design被引频次学科排名




书目名称Minimizing and Exploiting Leakage in VLSI Design年度引用




书目名称Minimizing and Exploiting Leakage in VLSI Design年度引用学科排名




书目名称Minimizing and Exploiting Leakage in VLSI Design读者反馈




书目名称Minimizing and Exploiting Leakage in VLSI Design读者反馈学科排名




单选投票, 共有 0 人参与投票
 

0票 0%

Perfect with Aesthetics

 

0票 0%

Better Implies Difficulty

 

0票 0%

Good and Satisfactory

 

0票 0%

Adverse Performance

 

0票 0%

Disdainful Garbage

您所在的用户组没有投票权限
发表于 2025-3-21 20:42:12 | 显示全部楼层
发表于 2025-3-22 03:50:40 | 显示全部楼层
发表于 2025-3-22 07:56:45 | 显示全部楼层
https://doi.org/10.1007/978-1-4419-0950-3ASIC; EDA; Electronic Design Automation; Leakage; Low Power Design; Sub-threshold logic; Transistor; VLSI; V
发表于 2025-3-22 10:34:05 | 显示全部楼层
978-1-4899-8529-3Springer-Verlag US 2010
发表于 2025-3-22 13:56:49 | 显示全部楼层
发表于 2025-3-22 19:16:19 | 显示全部楼层
发表于 2025-3-22 23:49:06 | 显示全部楼层
e second technique reduces leakage by applying the optimal Reverse Body Bias (RBB) voltage. This book also shows readers how to turn the leakage problem into an opportunity, through the use of sub-threshold logic..978-1-4899-8529-3978-1-4419-0950-3
发表于 2025-3-23 01:49:25 | 显示全部楼层
发表于 2025-3-23 07:32:12 | 显示全部楼层
Self-Competitive Neural NetworksNN tries to improve its accuracy by competing with itself (generating hard samples and then learning them), the technique is called Self-Competitive Neural Network (SCNN). To generate such samples, we pose the problem as an optimization task, where the network weights are fixed and use a gradient de
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-5-21 11:46
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表