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Titlebook: Microelectronic Test Structures for CMOS Technology; Manjul Bhushan,Mark B. Ketchen Book 2011 Springer Science+Business Media, LLC 2011 Bh

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书目名称Microelectronic Test Structures for CMOS Technology
编辑Manjul Bhushan,Mark B. Ketchen
视频video
概述Provides a comprehensive guide to designing the most effective and lowest-cost microelectronic test structures.Uses specific examples of good design techniques and discusses common errors to avoid in
图书封面Titlebook: Microelectronic Test Structures for CMOS Technology;  Manjul Bhushan,Mark B. Ketchen Book 2011 Springer Science+Business Media, LLC 2011 Bh
描述.Microelectronic Test Structures for CMOS Technology and Products. addresses the basic concepts of the design of test structures for incorporation within test-vehicles, scribe-lines, and CMOS products. The role of test structures in the development and monitoring of CMOS technologies and products has become ever more important with the increased cost and complexity of development and manufacturing. In this timely volume, IBM scientists Manjul Bhushan and Mark Ketchen emphasize high speed characterization techniques for digital CMOS circuit applications and bridging between circuit performance and characteristics of MOSFETs and other circuit elements.  Detailed examples are presented throughout, many of which are equally applicable to other microelectronic technologies as well. The authors’ overarching goal is to provide students and technology practitioners alike a practical guide to the disciplined design and use of test structures that give unambiguous information on the parametrics and performance of digital CMOS technology. .
出版日期Book 2011
关键词Bhushan; CMOS; CMOS Process; CMOS technology; Circuit design; Ketchen; Manjul Bhushan; Manufacturability; Ma
版次1
doihttps://doi.org/10.1007/978-1-4419-9377-9
isbn_softcover978-1-4899-9055-6
isbn_ebook978-1-4419-9377-9
copyrightSpringer Science+Business Media, LLC 2011
The information of publication is updating

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Test Structures for SOI Technology,e circuits have higher immunity to latch up and to soft errors generated by incident radiation. In partially depleted silicon-on-insulator (PD-SOI) technology, electrical isolation of the MOSFET body from the underlying silicon substrate facilitates modulation of the threshold voltage, providing an opportunity for further circuit performance gain.
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Capacitors, of inter-level dielectric properties such as effective dielectric constant and film geometries such as layer thicknesses and linewidths. . characteristics of diodes are used for profiling carrier densities in silicon devices. Carrier lifetime measurement in silicon utilizes . and . characteristics of MOS capacitors.
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MOSFETs,Statistical fluctuations in the number of dopant atoms in the channel and local linewidth variations lead to variability in parameters of nominally identical MOSFETs. Hence, the focus on MOSFET macro design and test in this chapter primarily concerns DC . and variability characterization.
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