Titlebook: Metal-Semiconductor Schottky Barrier Junctions and Their Applications; B. L. Sharma Book 1984 Springer Science+Business Media New York 198

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Physics of Schottky Barrier Junctions,edge of metal-semiconductor diodes is more than a century old. F. Braun,. in 1874, reported the rectifying nature of metallic contacts on copper, iron, and lead sulfide crystals. Although numerous experimental and theoretical studies have been carried out since then, our understanding of the metalse

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Schottky-Barrier-Type Optoelectronic Structures,-type junction” to refer to rectifying metal-semiconductor (MS) junctions, metal-interfacial layer-semiconductor (MIS) junctions, and semiconductor-interfacial layer-semiconductor (SIS) junctions. The optoelectronic structures to be considered are light-emitting diodes, photodiodes, and photovoltaic

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Schottky Barrier Gate Charge-Coupled Devices,t as a delay line, dates to the early fifties.. The basic principle is quite simple. Sampled values of the analog signal are stored in the form of charges on a series of capacitors. A switch between each capacitor transfers the charge from one capacitor to the next, following a command from a clock

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