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Titlebook: Memristor Technology: Synthesis and Modeling for Sensing and Security Applications; Heba Abunahla,Baker Mohammad Book 2018 Springer Intern

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发表于 2025-3-21 19:35:24 | 显示全部楼层 |阅读模式
书目名称Memristor Technology: Synthesis and Modeling for Sensing and Security Applications
编辑Heba Abunahla,Baker Mohammad
视频video
概述Discusses a detailed, physics-based mathematical model, which can guide the design and fabrication process of memristive devices.Describes detailed fabrication process steps for real memristor devices
丛书名称Analog Circuits and Signal Processing
图书封面Titlebook: Memristor Technology: Synthesis and Modeling for Sensing and Security Applications;  Heba Abunahla,Baker Mohammad Book 2018 Springer Intern
描述.This book provides readers with a single-source guide to fabricate, characterize and model memristor devices for sensing applications.  The authors describe a correlated, physics-based model to simulate and predict the behavior of devices fabricated with different oxide materials, active layer thickness, and operating temperature.  They discuss memristors from various perspectives, including working mechanisms, different synthesis methods, characterization procedures, and device employment in radiation sensing and security applications..
出版日期Book 2018
关键词Memristor; Memristor Devices; Memristor Based Circuits; Memristive Systems; Memristor Devices for radiat
版次1
doihttps://doi.org/10.1007/978-3-319-65699-1
isbn_softcover978-3-319-88083-9
isbn_ebook978-3-319-65699-1Series ISSN 1872-082X Series E-ISSN 2197-1854
issn_series 1872-082X
copyrightSpringer International Publishing AG 2018
The information of publication is updating

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发表于 2025-3-21 22:05:25 | 显示全部楼层
Heba Abunahla,Baker MohammadDiscusses a detailed, physics-based mathematical model, which can guide the design and fabrication process of memristive devices.Describes detailed fabrication process steps for real memristor devices
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Memristor Technology: Synthesis and Modeling for Sensing and Security Applications978-3-319-65699-1Series ISSN 1872-082X Series E-ISSN 2197-1854
发表于 2025-3-22 15:50:04 | 显示全部楼层
,Synthesis and Characterization of Micro-Thick TiO2 and HfO2 Memristors, of the micro-thick HfO. devices provided here is to investigate the switchability of the novel system and to study the effect of changing key parameters such as (i) the electrode material and (ii) the drying temperature during solgel processing on the resistive switching behavior. The results prese
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Synthesis and Characterization of Wire-Based NbO Memristive Junctions,e voltage flux applied through the ~400 nm thick NbO junction is shown to have a linear relationship to the charge produced within the device. The conductance value . is a function of the total flux history applied. This has implications in emerging neuromorphic semiconductor hardware.
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