Titlebook: Materials for Information Technology; Devices, Interconnec Ehrenfried Zschech (Dr. rer. nat.),Caroline Whelan Book 2005 Springer-Verlag Lon

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Floating-dot Memory Transistors on SOI Substrateuels the demand for these devices. The presented floating-dot memory concept discloses a related and CMOS-compatible alternative with enhanced write/erase endurance compared to FLASH while not demanding severe changes of the manufacturing process at the same time. Here, the charge-storing silicon na

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Engineering Materials and Processeshttp://image.papertrans.cn/m/image/625840.jpg

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Thin-film Engineering by Atomic-layer Deposition for Ultra-scaled and Novel Devicesonics. Growth temperature, surface preparation and functionalization, and precursor combinations, when properly selected, allow achieving the desired film properties. Improvements in ALD film quality require a deeper knowledge of the growth mechanisms involved, while substrates, precursors, and deposition parameters change.

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