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Titlebook: Materials Modification by High-fluence Ion Beams; Roger Kelly,M. Fernanda Silva Book 1989 Kluwer Academic Publishers 1989 AES.EELS.Helium-

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书目名称Materials Modification by High-fluence Ion Beams
编辑Roger Kelly,M. Fernanda Silva
视频video
丛书名称NATO Science Series E:
图书封面Titlebook: Materials Modification by High-fluence Ion Beams;  Roger Kelly,M. Fernanda Silva Book 1989 Kluwer Academic Publishers 1989 AES.EELS.Helium-
出版日期Book 1989
关键词AES; EELS; Helium-Atom-Streuung; Laser; PED; STEM; alloy; crystal; spectroscopy
版次1
doihttps://doi.org/10.1007/978-94-009-1267-0
isbn_softcover978-94-010-7063-8
isbn_ebook978-94-009-1267-0Series ISSN 0168-132X
issn_series 0168-132X
copyrightKluwer Academic Publishers 1989
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Effects of Ar+ Angle-of-Incidence on the Etching of Si with Cl2 and Low-Energy Ar+ Ionsas alone) and ion-influenced etching is observed. In several cases ion bombardment enhances the etch rate, sometimes to a level higher than the sum of the spontaneous etch rate and the pure sputter rate. (However, in other cases ion bombardment causes a rate reduction)..
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Computer Simulation of Stopping and Sputteringescription of radiation damage in metals /2/. First BCA range calculations followed soon /3/. Since then, simultaneously with the increasing availability of fast and large computers, more than 400 papers on the computer simulation of atomic collisions in solids have been published.
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Ion Formation by Very High Energetic Ion Impact on Solidswhen it is irradiated by a 80 MeV I beam (1). On the other hand, an insulator shows a zone of vigorous damage close to the nuclear track (2) - an europium oxide film emits about 800 Eu atoms under bombardment with a 80 MeV Kr beam (3).
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Historical Overview on the Fundamentals of Sputteringd to fields far away from that in which sputtering phenomena were first studied and developed (e.g. I found an application of sputtering to blood cells, to remove surface layers from red blood cells! [2]).
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Magnetron Sputtering - Physics and Designwhen reactive or radio frequency (R.F.) sputtering are used, the high rate of coating compared to ordinary diode sputtering, the versatility and adaptability to different shapes and geometries and, last but not the least, the polution-free nature of the technique.
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Computer Simulation of Ion-Beam Mixing of Cobalt on Silicond E. amounts to between 10 and 100 eV [5]. In this case one can expect a maximum recoil mixing efficiency at the depth of maximum energy deposition by the primary ions, i.e. where F. (.) has its maximum [3,5]. There are also many experimental works which assess this suggestion [6,7,8].
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