书目名称 | Matching Properties of Deep Sub-Micron MOS Transistors | 编辑 | Jeroen A. Croon,Willy Sansen,Herman E. Maes | 视频video | | 概述 | Aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.Includes supplementary material: | 丛书名称 | The Springer International Series in Engineering and Computer Science | 图书封面 |  | 描述 | .Matching Properties of Deep Sub-Micron MOS Transistors. examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction:..A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter...The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. ..The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fl | 出版日期 | Book 2005 | 关键词 | CMOS; Leistungsfeldeffekttransistor; MOSFET matching; MOSFET modeling; Transistor; device characterizatio | 版次 | 1 | doi | https://doi.org/10.1007/b105122 | isbn_softcover | 978-1-4419-3718-6 | isbn_ebook | 978-0-387-24313-9Series ISSN 0893-3405 | issn_series | 0893-3405 | copyright | Springer-Verlag US 2005 |
The information of publication is updating
|
|