Titlebook: MOSFET Models for VLSI Circuit Simulation; Theory and Practice Narain Arora Book 1993 Springer-Verlag/Wien 1993 Regression.SPICE.Signal.VLS

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Overview,60 that the first MOS transistor using silicon as the semiconductor material was reported by Kang and Atalla [2]. The MOS technology became viable only after methods of routinely growing reliable oxides were developed and reported by Snow, Grove, Deal and Sah in 1964 [3]. Since that time the MOS ind

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Review of Basic Semiconductor and , Junction Theory,follows. Also reviewed is . junction theory as its behavior is basic to the operation of transistors. The review is brief and covers only those topics which have direct relevance to MOS VLSI circuits. For more exhaustive treatments, the reader is referred to textbooks on the subject [1]–[12].

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MOS Capacitor, a two terminal device, with one electrode connected to the metal and the other electrode connected to the semiconductor, a . results. The MOS capacitor is a very useful device both for evaluating the MOS IC fabrication process and for predicting the MOS transistor characteristics. For this reason M

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Threshold Voltage,on. The accurate modeling of threshold voltage is important to predict correct circuit behavior from a circuit simulator. Since .. has profound effect on circuit operation, it is often used to monitor process variations. Present day MOS process invariably use ion implantation into the channel region

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MOSFET DC Model, the device remain constant, that is they do not vary with time; (b) a dynamic or AC model, where the device terminal voltages do not remain constant but vary with time. In this chapter we will discuss only DC MOS transistor models for different regions of device operation. In the next chapter we wi

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Modeling Hot-Carrier Effects, continued, the supply voltage remained constant (normally 5 V) due to the constraints of retaining compatibility with existing systems. This has resulted in increased vertical electric fields in the oxide which have already reached above 1 MV/cm in thin oxides. The scaling of channel length, meanwh

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Model Parameter Extraction Using Optimization Method,easurements and/or extraction. We had also discussed linear regression methods to determine basic MOSFET parameters. In this chapter we will be concerned with the nonlinear optimization techniques for extracting the device model parameters for various DC and AC models. These techniques are general p