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Titlebook: MEMS and Nanotechnology, Volume 5; Proceedings of the 2 Barton C. Prorok,LaVern Starman Conference proceedings 2016 The Society for Experim

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Time and Temperature Dependence of Stress Relaxation in Al and Al Alloy Thin Films Application for ow the normalize modulus decreasing less with a greater content of Mg. This result proves that adding more different atoms can obstruct the movement of dislocation and enhance the mechanism of Al thin films. It shows that Al-Mg thin films have better relaxation resistance than Al thin films and thus
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Measurement of the Electromechanical Response of Capacitors in Dynamic Loading Conditions,correlated with high speed imaging showing the onset of capacitor failure. The amount of change in capacitance was indicative of the total or partial flexural failure modes of floating electrode capacitors accounting for more than 90 % of breakdowns. The 6 % standard deviation accuracy of the techni
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D. Papkov,K. Maleckis,Y. Zou,M. Andalib,A. Goponenko,Y. Dzenis
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