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Titlebook: Lungen und Kleiner Kreislauf; 19. bis 21. Oktober W. Lochner,E. Witzleb Conference proceedings 1957 Springer-Verlag oHG. Berlin · Göttinge

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H. Venrathture on nanostructure control using FIB, we will describe a new technique that allows lateral control of the positions of individual self-assembled quantum dots on a surface. The materials system we will consider is Ge islands grown on the Si(001) surface. The technique consists of three steps: (1)
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G. Rodewalde semiconductors and are fully miscible. Germanium growth on Si occurs via the Stranski–Krastanow (S–K) mode due to the 4% lattice mismatch between Ge and Si and the lower surface free energy of Ge. This growth mode is characterized by a transition from initially layer-by-layer growth to three-dimen
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