找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: Low-Dimensional Structures in Semiconductors; From Basic Physics t A. R. Peaker,H. G. Grimmeiss Book 1991 Springer Science+Business Media N

[复制链接]
查看: 47495|回复: 53
发表于 2025-3-21 17:09:11 | 显示全部楼层 |阅读模式
书目名称Low-Dimensional Structures in Semiconductors
副标题From Basic Physics t
编辑A. R. Peaker,H. G. Grimmeiss
视频video
丛书名称NATO Science Series B:
图书封面Titlebook: Low-Dimensional Structures in Semiconductors; From Basic Physics t A. R. Peaker,H. G. Grimmeiss Book 1991 Springer Science+Business Media N
描述This volume contains a sequence of reviews presented at the NATO Advanced Study Institute on ‘Low Dimensional Structures in Semiconductors ... from Basic Physics to Applications.‘ This was part of the International School of Materials Science and 1990 at the Ettore Majorana Centre in Sicily. Technology held in July Only a few years ago, Low Dimensional Structures was an esoteric concept, but now it is apparent they are likely to playa major role in the next generation of electronic devices. The theme of the School acknowledged this rapidly developing maturity.‘ The contributions to the volume consider not only the essential physics, but take a wider view of the topic, starting from material growth and processing, then prog­ ressing right through to applications with some discussion of the likely use of low dimensional devices in systems. The papers are arranged into four sections, the first of which deals with basic con­ cepts of semiconductor and low dimensional systems. The second section is on growth and fabrication, reviewing MBE and MOVPE methods and discussing the achievements and limitations of techniques to reduce structures into the realms of one and zero dimensions. The t
出版日期Book 1991
关键词Phase; electrons; integrated circuit; laser; materials science; optoelectronics; semiconductors
版次1
doihttps://doi.org/10.1007/978-1-4899-0623-6
isbn_softcover978-1-4899-0625-0
isbn_ebook978-1-4899-0623-6Series ISSN 0258-1221
issn_series 0258-1221
copyrightSpringer Science+Business Media New York 1991
The information of publication is updating

书目名称Low-Dimensional Structures in Semiconductors影响因子(影响力)




书目名称Low-Dimensional Structures in Semiconductors影响因子(影响力)学科排名




书目名称Low-Dimensional Structures in Semiconductors网络公开度




书目名称Low-Dimensional Structures in Semiconductors网络公开度学科排名




书目名称Low-Dimensional Structures in Semiconductors被引频次




书目名称Low-Dimensional Structures in Semiconductors被引频次学科排名




书目名称Low-Dimensional Structures in Semiconductors年度引用




书目名称Low-Dimensional Structures in Semiconductors年度引用学科排名




书目名称Low-Dimensional Structures in Semiconductors读者反馈




书目名称Low-Dimensional Structures in Semiconductors读者反馈学科排名




单选投票, 共有 0 人参与投票
 

0票 0%

Perfect with Aesthetics

 

0票 0%

Better Implies Difficulty

 

0票 0%

Good and Satisfactory

 

0票 0%

Adverse Performance

 

0票 0%

Disdainful Garbage

您所在的用户组没有投票权限
发表于 2025-3-21 20:20:31 | 显示全部楼层
Impurities in Semiconductorshe application of methods other than junction space charge techniques (JSCT). Chalcogens and several transition metals in silicon are used as examples in order to show how important parameters and properties of defects can be revealed by using spectroscopic methods. One of the methods, namely photot
发表于 2025-3-22 03:46:15 | 显示全部楼层
发表于 2025-3-22 06:38:52 | 显示全部楼层
发表于 2025-3-22 12:39:44 | 显示全部楼层
Metal Organic Vapour Phase Epitaxy for the Growth of Semiconductor Structures and Strained Layerstransistors were fabricated from germanium, later from silicon. It was soon realized that also the A.–B. or A. – B. materials (most often simply termed III–V or II–VI materials) exhibited semiconductive behaviour. The energy difference between the valence band and the conduction band made them candi
发表于 2025-3-22 15:40:00 | 显示全部楼层
发表于 2025-3-22 18:34:41 | 显示全部楼层
发表于 2025-3-22 22:59:37 | 显示全部楼层
Chemical Interfaces: Structure, Properties and Relaxation properties of materials by the creation of interfaces. ‘Band gap engineering’, the attempt to tailor the electronic properties of semiconductors by interleaving many dissimilar layers is an extreme example of this approach. Technologically most advanced and thus most widely used are interfaces betw
发表于 2025-3-23 01:55:59 | 显示全部楼层
Capacitance-Voltage Profiling of Multilayer Semiconductor Structures heterojunction band offsets [1]. It has been recognised [2] that a profile of the free electron concentration n(x) is obtained from C-V techniques rather than that of the doping profile N.(x). These are not necessarily the same even for the case of very shallow donors. Indeed, they will be differen
发表于 2025-3-23 05:53:09 | 显示全部楼层
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-6-22 15:25
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表