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Titlebook: Lecture Notes on Principles of Plasma Processing; Francis F. Chen,Jane P. Chang Book 2003 Springer Science+Business Media New York 2003 Pl

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书目名称Lecture Notes on Principles of Plasma Processing
编辑Francis F. Chen,Jane P. Chang
视频video
图书封面Titlebook: Lecture Notes on Principles of Plasma Processing;  Francis F. Chen,Jane P. Chang Book 2003 Springer Science+Business Media New York 2003 Pl
描述.Plasma processing of semiconductors is an interdisciplinary field requiring knowledge of both plasma physics and chemical engineering. The two authors are experts in each of these fields, and their collaboration results in the merging of these fields with a common terminology. Basic plasma concepts are introduced painlessly to those who have studied undergraduate electromagnetics but have had no previous exposure to plasmas. Unnecessarily detailed derivations are omitted; yet the reader is led to understand in some depth those concepts, such as the structure of sheaths, that are important in the design and operation of plasma processing reactors. Physicists not accustomed to low-temperature plasmas are introduced to chemical kinetics, surface science, and molecular spectroscopy. The material has been condensed to suit a nine-week graduate course, but it is sufficient to bring the reader up to date on current problems such as copper interconnects, low-k and high-k dielectrics, and oxide damage. Students will appreciate the web-style layout with ample color illustrations opposite the text, with ample room for notes..This short book is ideal for new workers in the semiconductor indus
出版日期Book 2003
关键词Plasma; Vakuuminjektionsverfahren; chemical engineering; chemistry; color; dielectrics; plasma physics; sem
版次1
doihttps://doi.org/10.1007/978-1-4615-0181-7
isbn_softcover978-0-306-47497-2
isbn_ebook978-1-4615-0181-7
copyrightSpringer Science+Business Media New York 2003
The information of publication is updating

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ECR Sources,5 GHz. Both the large magnetic field of 875G and the microwave waveguide plumbing make these reactors more complicated and expensive than RIE reactors. Unless one uses tricky methods that depend on nonuniform magnetic fields and densities, microwaves cannot penetrate into a plasma if ω. > ω. Aτ 2.45
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Discharge Equilibrium,roducing the right mixture of chemical species and the energy and flux of ions onto the substrate. For some processes, such as cleaning and stripping, simply a high density of oxygen would do; but for the more delicate etching processes, the proper equilibrium conditions are crucial. Reactor-scale n
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