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Titlebook: Jenseits von Sein und Zeit; Eine Einführung in E Stephan Strasser Book 1978 Martinus Nijhoff, The Hague, Netherlands 1978 Begriff.Emmanuel

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Stephan Strasseride) (PVDF) and polyvinylidene fluoride trifluoroethylene [P(VDF-TrFE)] thin films as ferroelectric layer. PVDF and P(VDF-TrFE) thin films were fabricated by sol–gel method on Si(100) wafers. The drain current–gate voltage (.–.) characteristics of the fabricated MFSFETs with PVDF and P(VDF-TrFE) thi
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Stephan StrasserZnO, a ferroelectric film of Pb(Zr,Ti)O. (PZT), and a bottom-gate electrode of SrRuO. (SRO) are grown on a SrTiO. substrate. Structural characterization shows a heteroepitaxy of the fabricated ZnO/PZT/SRO/STO structure with a good crystalline quality and absence of an interface reaction layer. When
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Stephan Strassertality, better scalability, higher read–write speeds, lower dissipation powers, higher tamper resistances, and higher radioactivity tolerance. But memory retention was the most critical problem for its practical realization. Mechanisms of degradation of the retention are discussed in metal–ferroelec
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