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Titlebook: Ion Implantation in Semiconductors and Other Materials; Billy L. Crowder Book 1973 Plenum Press, New York 1973 Plantation.corrosion.crysta

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书目名称Ion Implantation in Semiconductors and Other Materials
编辑Billy L. Crowder
视频video
丛书名称The IBM Research Symposia Series
图书封面Titlebook: Ion Implantation in Semiconductors and Other Materials;  Billy L. Crowder Book 1973 Plenum Press, New York 1973 Plantation.corrosion.crysta
描述During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch­ Partenkirchen, Germany, in 1971. At the present time, our under­ standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta­ tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta­ tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta­ tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder,
出版日期Book 1973
关键词Plantation; corrosion; crystal; diffusion; electroluminescence; metals; paper; semiconductor
版次1
doihttps://doi.org/10.1007/978-1-4684-2064-7
isbn_softcover978-1-4684-2066-1
isbn_ebook978-1-4684-2064-7
copyrightPlenum Press, New York 1973
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Concentration Profiles of Arsenic Implanted in Silicon. The nearly gaussian components agree with the prediction by the LSS theory. The exponential shape was not observed in heavily damaged silicon. The slope of the exponential tail is independent of a dose, substrate temperature and ion energy. It is proposed that this tail is caused by a rapid diffusion process such as interstitial diffusion.
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The Effect of Ion Implantation on the Lattice Location of Arsenic in Arsenic — Doped Siof diffusing distances greater than lμm before causing the off site movement of an arsenic atom. Annealing of the tellurium bombarded samples to 700 to 800°C restores most of the off site arsenic to substitutional positions in the lattice.
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Experimental Analysis of Concentration Profiles of Boron Implanted in Siliconh as temperature, crystal direction, crystal perfection. The boron profiles in amorphous silicon were compared with theory. Another aspect studied is the profile distortion due to heat treatments. By comparison of the boron profiles with corresponding electrical profiles valuable additional information was obtained.
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nding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch­ Partenkirchen, Germany, in 1971. At the present time, our under­ standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and
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Calorimetric Determination of Optical Absorption in Proton-Bombarded GaAsn the square of the photon energy has been observed in other measurements for high fluence Xe ion implantation. Seventy percent of the proton-induced attenuation anneals below 300°C in agreement with previously measured neutron-induced optical attenuation.
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